Growth of well-aligned carbon nanotubes on a large area of Co-Ni co-deposited silicon oxide substrate by thermal chemical vapor deposition

Cheol Jin Lee; Jeunghee Park; Seung Youl Kang; Jin Ho Lee

doi:10.1016/S0009-2614(00)00521-2

Growth of well-aligned carbon nanotubes on a large area of Co-Ni co-deposited silicon oxide substrate by thermal chemical vapor deposition

Cheol Jin Lee, Jeunghee Park, Seung Youl Kang, Jin Ho Lee

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

We have grown vertically well-aligned multiwalled carbon nanotubes (CNT) on a large area of cobalt-nickel (Co-Ni) co-deposited silicon oxide substrate by thermal chemical vapor deposition using C₂H₂ gas, at 950°C. The diameter of CNTs is in the range of 50-120 nm and the length is about 130 μm. The grown CNTs have a bamboo structure and closed tip with no catalytic particles inside. As the particle size of Co-Ni catalyst decreases, the vertical alignment is enhanced. The CNTs exhibits a low turn-on voltage of 0.8 V/μm with an emission current density of 0.1 μA cm^-2.

Original language	English
Pages (from-to)	554-559
Number of pages	6
Journal	Chemical Physics Letters
Volume	323
Issue number	5-6
DOIs	https://doi.org/10.1016/S0009-2614(00)00521-2
Publication status	Published - 2000 Jun 23
Externally published	Yes

Bibliographical note

Funding Information:
The authors would like to thank J.B. Park (Korea Materials Analysis Co.) for the TEM analysis. J.P. is grateful for financial support from the research program of Korea University.

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/S0009-2614(00)00521-2

Cite this

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title = "Growth of well-aligned carbon nanotubes on a large area of Co-Ni co-deposited silicon oxide substrate by thermal chemical vapor deposition",

abstract = "We have grown vertically well-aligned multiwalled carbon nanotubes (CNT) on a large area of cobalt-nickel (Co-Ni) co-deposited silicon oxide substrate by thermal chemical vapor deposition using C2H2 gas, at 950°C. The diameter of CNTs is in the range of 50-120 nm and the length is about 130 μm. The grown CNTs have a bamboo structure and closed tip with no catalytic particles inside. As the particle size of Co-Ni catalyst decreases, the vertical alignment is enhanced. The CNTs exhibits a low turn-on voltage of 0.8 V/μm with an emission current density of 0.1 μA cm-2.",

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note = "Funding Information: The authors would like to thank J.B. Park (Korea Materials Analysis Co.) for the TEM analysis. J.P. is grateful for financial support from the research program of Korea University. ",

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doi = "10.1016/S0009-2614(00)00521-2",

language = "English",

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AU - Lee, Cheol Jin

AU - Park, Jeunghee

AU - Kang, Seung Youl

AU - Lee, Jin Ho

N1 - Funding Information: The authors would like to thank J.B. Park (Korea Materials Analysis Co.) for the TEM analysis. J.P. is grateful for financial support from the research program of Korea University.

PY - 2000/6/23

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N2 - We have grown vertically well-aligned multiwalled carbon nanotubes (CNT) on a large area of cobalt-nickel (Co-Ni) co-deposited silicon oxide substrate by thermal chemical vapor deposition using C2H2 gas, at 950°C. The diameter of CNTs is in the range of 50-120 nm and the length is about 130 μm. The grown CNTs have a bamboo structure and closed tip with no catalytic particles inside. As the particle size of Co-Ni catalyst decreases, the vertical alignment is enhanced. The CNTs exhibits a low turn-on voltage of 0.8 V/μm with an emission current density of 0.1 μA cm-2.

AB - We have grown vertically well-aligned multiwalled carbon nanotubes (CNT) on a large area of cobalt-nickel (Co-Ni) co-deposited silicon oxide substrate by thermal chemical vapor deposition using C2H2 gas, at 950°C. The diameter of CNTs is in the range of 50-120 nm and the length is about 130 μm. The grown CNTs have a bamboo structure and closed tip with no catalytic particles inside. As the particle size of Co-Ni catalyst decreases, the vertical alignment is enhanced. The CNTs exhibits a low turn-on voltage of 0.8 V/μm with an emission current density of 0.1 μA cm-2.

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Growth of well-aligned carbon nanotubes on a large area of Co-Ni co-deposited silicon oxide substrate by thermal chemical vapor deposition

Abstract

Bibliographical note

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