Abstract
This paper presents H-band down-conversion and up-conversion mixers implemented in a 250-nm InP double heterojunction bipolar transistor technology. The mixers are aimed to achieve a wide IF bandwidth and high conversion gain for high-speed wireless communication. The- mixer core employs a Gilbert cell pumped by a fundamental LO signal, leading to high conversion gain and high isolation. To achieve a wide IF bandwidth, the inductive-peaking, Cherry-Hooper, and staggered-tuned techniques are used at IF output of the down-conversion mixer. The down- and up-conversion mixers exhibit measured conversion gain of 7.5 and -5.2 dB with 3-dB SSB IF bandwidth of 20 and 25 GHz at LO frequency of 270 and 280 GHz, respectively.
| Original language | English |
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| Title of host publication | 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Volume | 2016-August |
| ISBN (Electronic) | 9781509006984 |
| DOIs | |
| Publication status | Published - 2016 Aug 9 |
| Event | 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States Duration: 2016 May 22 → 2016 May 27 |
Other
| Other | 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 |
|---|---|
| Country/Territory | United States |
| City | San Francisco |
| Period | 16/5/22 → 16/5/27 |
Keywords
- Down-conversion mixer
- InP DHBT
- MMIC
- up-conversion mixer
- wide IF bandwidth
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering