Half-Terahertz operation of SiGe HBTs

Ramkumar Krithivasan, Yuan Lu, John D. Cressler, Jae Sung Rieh, Marwan H. Khater, David Ahlgren, Greg Freeman

Research output: Contribution to journalArticlepeer-review

92 Citations (Scopus)

Abstract

This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (fT) of 510 GHz at 4.5 K was measured for a 0.12 × 1.0 μ2 SiGe HBT (352 GHz at 300 K) at a breakdown voltage BVCEO of 1.36 V (1.47 V at 300 K), yielding an fT × BVCEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

Original languageEnglish
Pages (from-to)567-569
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number7
DOIs
Publication statusPublished - 2006 Jul

Bibliographical note

Funding Information:
Manuscript received February 28, 2006; revised April 10, 2006. This work was supported by NASA, IBM, and the Georgia Electronic Design Center at Georgia Tech. The review of this letter was arranged by Editor S. Bulucea. R. Krithivasan, Y. Lu, and J. D. Cressler are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 USA (e-mail: cressler@ece.gatech.edu). J.-S. Rieh is with Korea University, Seoul 136-701, Korea. M. H. Khater, D. Ahlgren, and G. Freeman are with IBM Microelectronics, East Fishkill, NY 12533 USA. Digital Object Identifier 10.1109/LED.2006.876298

Keywords

  • Cryogenic temperatures
  • Frequency response
  • Heterojunction bipolar transistor (HBT)
  • SiGe HBT
  • Silicon-germanium (SiGe)
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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