Half-Terahertz operation of SiGe HBTs

Ramkumar Krithivasan; Yuan Lu; John D. Cressler; Jae Sung Rieh; Marwan H. Khater; David Ahlgren; Greg Freeman

doi:10.1109/LED.2006.876298

Half-Terahertz operation of SiGe HBTs

Ramkumar Krithivasan^*
, Yuan Lu
, John D. Cressler
, Jae Sung Rieh
, Marwan H. Khater
, David Ahlgren
, Greg Freeman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

95 Citations (Scopus)

Abstract

This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f_T) of 510 GHz at 4.5 K was measured for a 0.12 × 1.0 μ₂ SiGe HBT (352 GHz at 300 K) at a breakdown voltage BV_CEO of 1.36 V (1.47 V at 300 K), yielding an f_T × BV_CEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

Original language	English
Pages (from-to)	567-569
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	7
DOIs	https://doi.org/10.1109/LED.2006.876298
Publication status	Published - 2006 Jul

Bibliographical note

Funding Information:
Manuscript received February 28, 2006; revised April 10, 2006. This work was supported by NASA, IBM, and the Georgia Electronic Design Center at Georgia Tech. The review of this letter was arranged by Editor S. Bulucea. R. Krithivasan, Y. Lu, and J. D. Cressler are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 USA (e-mail: [email protected]). J.-S. Rieh is with Korea University, Seoul 136-701, Korea. M. H. Khater, D. Ahlgren, and G. Freeman are with IBM Microelectronics, East Fishkill, NY 12533 USA. Digital Object Identifier 10.1109/LED.2006.876298

Keywords

Cryogenic temperatures
Frequency response
Heterojunction bipolar transistor (HBT)
SiGe HBT
Silicon-germanium (SiGe)
Terahertz

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2006.876298

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title = "Half-Terahertz operation of SiGe HBTs",

abstract = "This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (fT) of 510 GHz at 4.5 K was measured for a 0.12 × 1.0 μ2 SiGe HBT (352 GHz at 300 K) at a breakdown voltage BVCEO of 1.36 V (1.47 V at 300 K), yielding an fT × BVCEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).",

keywords = "Cryogenic temperatures, Frequency response, Heterojunction bipolar transistor (HBT), SiGe HBT, Silicon-germanium (SiGe), Terahertz",

author = "Ramkumar Krithivasan and Yuan Lu and Cressler, \{John D.\} and Rieh, \{Jae Sung\} and Khater, \{Marwan H.\} and David Ahlgren and Greg Freeman",

note = "Funding Information: Manuscript received February 28, 2006; revised April 10, 2006. This work was supported by NASA, IBM, and the Georgia Electronic Design Center at Georgia Tech. The review of this letter was arranged by Editor S. Bulucea. R. Krithivasan, Y. Lu, and J. D. Cressler are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 USA (e-mail: [email protected]). J.-S. Rieh is with Korea University, Seoul 136-701, Korea. M. H. Khater, D. Ahlgren, and G. Freeman are with IBM Microelectronics, East Fishkill, NY 12533 USA. Digital Object Identifier 10.1109/LED.2006.876298",

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AU - Lu, Yuan

AU - Cressler, John D.

AU - Rieh, Jae Sung

AU - Khater, Marwan H.

AU - Ahlgren, David

AU - Freeman, Greg

N1 - Funding Information: Manuscript received February 28, 2006; revised April 10, 2006. This work was supported by NASA, IBM, and the Georgia Electronic Design Center at Georgia Tech. The review of this letter was arranged by Editor S. Bulucea. R. Krithivasan, Y. Lu, and J. D. Cressler are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 USA (e-mail: [email protected]). J.-S. Rieh is with Korea University, Seoul 136-701, Korea. M. H. Khater, D. Ahlgren, and G. Freeman are with IBM Microelectronics, East Fishkill, NY 12533 USA. Digital Object Identifier 10.1109/LED.2006.876298

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N2 - This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (fT) of 510 GHz at 4.5 K was measured for a 0.12 × 1.0 μ2 SiGe HBT (352 GHz at 300 K) at a breakdown voltage BVCEO of 1.36 V (1.47 V at 300 K), yielding an fT × BVCEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

AB - This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (fT) of 510 GHz at 4.5 K was measured for a 0.12 × 1.0 μ2 SiGe HBT (352 GHz at 300 K) at a breakdown voltage BVCEO of 1.36 V (1.47 V at 300 K), yielding an fT × BVCEO product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

KW - Cryogenic temperatures

KW - Frequency response

KW - Heterojunction bipolar transistor (HBT)

KW - SiGe HBT

KW - Silicon-germanium (SiGe)

KW - Terahertz

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DO - 10.1109/LED.2006.876298

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SN - 0741-3106

VL - 27

SP - 567

EP - 569

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

Half-Terahertz operation of SiGe HBTs

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Bibliographical note

Keywords

ASJC Scopus subject areas

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