Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz

Deuk Hee Lee; Dong Hoon Park; Sangsig Kim; Sang Yeol Lee

doi:10.1016/j.tsf.2011.03.021

Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz

Deuk Hee Lee
, Dong Hoon Park
, Sangsig Kim
, Sang Yeol Lee

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

An inorganic/organic vertical heterojunction diode has been demonstrated with p-type Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) deposited by spin coating on n-type Ga-doped ZnO (GZO) thin films. Transparent conducting GZO thin films are deposited on glass substrate by rf-magnetron sputtering. Electrical properties of GZO thin films are investigated depending on the processing temperatures. The resistivity, mobility and carrier concentration of the GZO thin films deposited at processing temperatures of 500 °C are measured to be about 3.6 × 10^-4 Ω cm, 23.8 cm²/Vs and 7.1 × 10²⁰ cm³, respectively. The root mean square surface roughness of the GZO thin films is calculated to be ~ 0.9 nm using atomic force microscopy. Current-voltage characteristics of the n-GZO/p-PEDOT:PSS heterojunction diode present rectifying operation. Half wave rectification is observed with the maximum output voltage of 1.85 V at 1 kHz. Low turn-on voltage of about 1.3 V is obtained and the ideality factor of the n-GZO/p-PEDOT:PSS diode is derived to be about 1.8.

Original language	English
Pages (from-to)	5658-5661
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	16
DOIs	https://doi.org/10.1016/j.tsf.2011.03.021
Publication status	Published - 2011 Jun 1

Bibliographical note

Funding Information:
This work was supported by the program for National Development Energy and Mid-Term Development of Local Bases funded by the Ministry of Knowledge Economy (MKE), South Korea.

Keywords

Diodes
Ga-doped zinc oxide
Half wave rectification
Heterojunction
Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)
Sputtering
p-n junctions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.03.021

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title = "Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz",

abstract = "An inorganic/organic vertical heterojunction diode has been demonstrated with p-type Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) deposited by spin coating on n-type Ga-doped ZnO (GZO) thin films. Transparent conducting GZO thin films are deposited on glass substrate by rf-magnetron sputtering. Electrical properties of GZO thin films are investigated depending on the processing temperatures. The resistivity, mobility and carrier concentration of the GZO thin films deposited at processing temperatures of 500 °C are measured to be about 3.6 × 10-4 Ω cm, 23.8 cm2/Vs and 7.1 × 1020 cm3, respectively. The root mean square surface roughness of the GZO thin films is calculated to be \textasciitilde{} 0.9 nm using atomic force microscopy. Current-voltage characteristics of the n-GZO/p-PEDOT:PSS heterojunction diode present rectifying operation. Half wave rectification is observed with the maximum output voltage of 1.85 V at 1 kHz. Low turn-on voltage of about 1.3 V is obtained and the ideality factor of the n-GZO/p-PEDOT:PSS diode is derived to be about 1.8.",

keywords = "Diodes, Ga-doped zinc oxide, Half wave rectification, Heterojunction, Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), Sputtering, p-n junctions",

author = "Lee, \{Deuk Hee\} and Park, \{Dong Hoon\} and Sangsig Kim and Lee, \{Sang Yeol\}",

note = "Funding Information: This work was supported by the program for National Development Energy and Mid-Term Development of Local Bases funded by the Ministry of Knowledge Economy (MKE), South Korea.",

year = "2011",

month = jun,

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doi = "10.1016/j.tsf.2011.03.021",

language = "English",

volume = "519",

pages = "5658--5661",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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T1 - Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz

AU - Lee, Deuk Hee

AU - Park, Dong Hoon

AU - Kim, Sangsig

AU - Lee, Sang Yeol

N1 - Funding Information: This work was supported by the program for National Development Energy and Mid-Term Development of Local Bases funded by the Ministry of Knowledge Economy (MKE), South Korea.

PY - 2011/6/1

Y1 - 2011/6/1

N2 - An inorganic/organic vertical heterojunction diode has been demonstrated with p-type Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) deposited by spin coating on n-type Ga-doped ZnO (GZO) thin films. Transparent conducting GZO thin films are deposited on glass substrate by rf-magnetron sputtering. Electrical properties of GZO thin films are investigated depending on the processing temperatures. The resistivity, mobility and carrier concentration of the GZO thin films deposited at processing temperatures of 500 °C are measured to be about 3.6 × 10-4 Ω cm, 23.8 cm2/Vs and 7.1 × 1020 cm3, respectively. The root mean square surface roughness of the GZO thin films is calculated to be ~ 0.9 nm using atomic force microscopy. Current-voltage characteristics of the n-GZO/p-PEDOT:PSS heterojunction diode present rectifying operation. Half wave rectification is observed with the maximum output voltage of 1.85 V at 1 kHz. Low turn-on voltage of about 1.3 V is obtained and the ideality factor of the n-GZO/p-PEDOT:PSS diode is derived to be about 1.8.

AB - An inorganic/organic vertical heterojunction diode has been demonstrated with p-type Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) deposited by spin coating on n-type Ga-doped ZnO (GZO) thin films. Transparent conducting GZO thin films are deposited on glass substrate by rf-magnetron sputtering. Electrical properties of GZO thin films are investigated depending on the processing temperatures. The resistivity, mobility and carrier concentration of the GZO thin films deposited at processing temperatures of 500 °C are measured to be about 3.6 × 10-4 Ω cm, 23.8 cm2/Vs and 7.1 × 1020 cm3, respectively. The root mean square surface roughness of the GZO thin films is calculated to be ~ 0.9 nm using atomic force microscopy. Current-voltage characteristics of the n-GZO/p-PEDOT:PSS heterojunction diode present rectifying operation. Half wave rectification is observed with the maximum output voltage of 1.85 V at 1 kHz. Low turn-on voltage of about 1.3 V is obtained and the ideality factor of the n-GZO/p-PEDOT:PSS diode is derived to be about 1.8.

KW - Diodes

KW - Ga-doped zinc oxide

KW - Half wave rectification

KW - Heterojunction

KW - Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)

KW - Sputtering

KW - p-n junctions

UR - https://www.scopus.com/pages/publications/79957990415

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DO - 10.1016/j.tsf.2011.03.021

M3 - Article

AN - SCOPUS:79957990415

SN - 0040-6090

VL - 519

SP - 5658

EP - 5661

JO - Thin Solid Films

JF - Thin Solid Films

IS - 16

ER -

Half wave rectification of inorganic/organic heterojunction diode at the frequency of 1 kHz

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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