Abstract
A harmonic-tuned high efficiency oscillator is designed using gallium nitride (GaN) high electron mobility transistors (HEMTs). The harmonic load-pull simulation is performed to find the voltage and current waveforms and to locate the optimum load impedance for high efficiency operation of the transistor. Then, the feedback network for the oscillation is synthesized based on the load-pull data. The series resonant circuit is employed in the feedback network to provide open circuit to the load network at harmonic frequencies. Therefore, the load network can be designed separately from the feedback network to present the optimum harmonic load impedances. In this way, the transistor in the oscillator can achieve the optimum voltage and current waveforms determined by the harmonic load-pull simulation. The fabricated GaN oscillator using the proposed design approach shows the maximum efficiency of 80.2% and output power of 35.1 dBm at 2.42 GHz under drain bias voltage of 22 V.
| Original language | English |
|---|---|
| Article number | 6202371 |
| Pages (from-to) | 318-320 |
| Number of pages | 3 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 22 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2012 |
Bibliographical note
Funding Information:Manuscript received November 25, 2011; revised April 10, 2012; accepted April 26, 2012. Date of publication May 17, 2012; date of current version June 01, 2012. This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0071530) and also by the Sogang University Research Grant of 2010.
Keywords
- GaN HEMT
- RF
- efficiency
- oscillator
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering