Heterestructures in GaInP grown using a change in Te doping

Y. Hsu; C. M. Fetzer; G. B. Stringfellow; J. K. Shurtleff; C. J. Choi; T. Y. Seong

doi:10.1063/1.373453

Heterestructures in GaInP grown using a change in Te doping

Y. Hsu, C. M. Fetzer, G. B. Stringfellow, J. K. Shurtleff, C. J. Choi, T. Y. Seong

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In organometallic vapor phase epitaxy, changes in growth conditions can be used to modulate the extent of CuPt ordering and, hence, the band gap energy of GaInP. One method is to add Te during growth. An increase in the band gap energy of 0.1 eV due to a decrease in ordering has been obtained by increasing the input pressure of diethyltelluride from 0 to 8 × 10^-6 Torr, which corresponds to a doping concentration of 6 × 10¹⁷ cm^-3. This simple procedure offers an attractive method to grow quantum wells (QWs) and superlattices, which are useful for band gap engineering, by modulating the input pressure of the Te precursor. Various heterostructures with abrupt interfaces were successfully grown with interruptions at the interfaces between the Te-doped and undoped GaInP layers. QWs as thin as 10 nm can be clearly seen from transmission electron microscope images.

Original language	English
Pages (from-to)	7776-7781
Number of pages	6
Journal	Journal of Applied Physics
Volume	87
Issue number	11
DOIs	https://doi.org/10.1063/1.373453
Publication status	Published - 2000 Jun
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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@article{f4f881d136a24936b03f99e72503cba4,

title = "Heterestructures in GaInP grown using a change in Te doping",

abstract = "In organometallic vapor phase epitaxy, changes in growth conditions can be used to modulate the extent of CuPt ordering and, hence, the band gap energy of GaInP. One method is to add Te during growth. An increase in the band gap energy of 0.1 eV due to a decrease in ordering has been obtained by increasing the input pressure of diethyltelluride from 0 to 8 × 10-6 Torr, which corresponds to a doping concentration of 6 × 1017 cm-3. This simple procedure offers an attractive method to grow quantum wells (QWs) and superlattices, which are useful for band gap engineering, by modulating the input pressure of the Te precursor. Various heterostructures with abrupt interfaces were successfully grown with interruptions at the interfaces between the Te-doped and undoped GaInP layers. QWs as thin as 10 nm can be clearly seen from transmission electron microscope images.",

author = "Y. Hsu and Fetzer, {C. M.} and Stringfellow, {G. B.} and Shurtleff, {J. K.} and Choi, {C. J.} and Seong, {T. Y.}",

year = "2000",

month = jun,

doi = "10.1063/1.373453",

language = "English",

volume = "87",

pages = "7776--7781",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Heterestructures in GaInP grown using a change in Te doping

AU - Hsu, Y.

AU - Fetzer, C. M.

AU - Stringfellow, G. B.

AU - Shurtleff, J. K.

AU - Choi, C. J.

AU - Seong, T. Y.

PY - 2000/6

Y1 - 2000/6

N2 - In organometallic vapor phase epitaxy, changes in growth conditions can be used to modulate the extent of CuPt ordering and, hence, the band gap energy of GaInP. One method is to add Te during growth. An increase in the band gap energy of 0.1 eV due to a decrease in ordering has been obtained by increasing the input pressure of diethyltelluride from 0 to 8 × 10-6 Torr, which corresponds to a doping concentration of 6 × 1017 cm-3. This simple procedure offers an attractive method to grow quantum wells (QWs) and superlattices, which are useful for band gap engineering, by modulating the input pressure of the Te precursor. Various heterostructures with abrupt interfaces were successfully grown with interruptions at the interfaces between the Te-doped and undoped GaInP layers. QWs as thin as 10 nm can be clearly seen from transmission electron microscope images.

AB - In organometallic vapor phase epitaxy, changes in growth conditions can be used to modulate the extent of CuPt ordering and, hence, the band gap energy of GaInP. One method is to add Te during growth. An increase in the band gap energy of 0.1 eV due to a decrease in ordering has been obtained by increasing the input pressure of diethyltelluride from 0 to 8 × 10-6 Torr, which corresponds to a doping concentration of 6 × 1017 cm-3. This simple procedure offers an attractive method to grow quantum wells (QWs) and superlattices, which are useful for band gap engineering, by modulating the input pressure of the Te precursor. Various heterostructures with abrupt interfaces were successfully grown with interruptions at the interfaces between the Te-doped and undoped GaInP layers. QWs as thin as 10 nm can be clearly seen from transmission electron microscope images.

UR - http://www.scopus.com/inward/record.url?scp=0007864798&partnerID=8YFLogxK

U2 - 10.1063/1.373453

DO - 10.1063/1.373453

M3 - Article

AN - SCOPUS:0007864798

SN - 0021-8979

VL - 87

SP - 7776

EP - 7781

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Heterestructures in GaInP grown using a change in Te doping

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