Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

Janghyuk Kim; Michael A. Mastro; Marko J. Tadjer; Ji Hyun Kim

doi:10.1021/acsami.8b07030

Heterostructure WSe₂-Ga₂O₃ Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

Janghyuk Kim, Michael A. Mastro, Marko J. Tadjer, Ji Hyun Kim

Research output: Contribution to journal › Article › peer-review

105 Citations (Scopus)

Abstract

Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-Ga₂O₃ junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe₂ flake. Typical diode characteristics with a high rectifying ratio of ∼10⁵ were observed in a p-WSe₂/n-Ga₂O₃ heterostructure diode, where WSe₂ and β-Ga₂O₃ were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent I_DS-V_DS output as well as I_DS-V_GS transfer characteristics with a high on/off ratio (∼10⁸) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe₂-Ga₂O₃ heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.

Original language	English
Pages (from-to)	29724-29729
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	35
DOIs	https://doi.org/10.1021/acsami.8b07030
Publication status	Published - 2018 Sept 5

Keywords

field-effect transistor
gallium oxide
heterostructure
two-dimensional material
wide bandgap semiconductor

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsami.8b07030

Cite this

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title = "Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics",

abstract = "Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of ∼105 were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and β-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent IDS-VDS output as well as IDS-VGS transfer characteristics with a high on/off ratio (∼108) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.",

keywords = "field-effect transistor, gallium oxide, heterostructure, two-dimensional material, wide bandgap semiconductor",

author = "Janghyuk Kim and Mastro, {Michael A.} and Tadjer, {Marko J.} and Kim, {Ji Hyun}",

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AU - Kim, Janghyuk

AU - Mastro, Michael A.

AU - Tadjer, Marko J.

AU - Kim, Ji Hyun

PY - 2018/9/5

Y1 - 2018/9/5

N2 - Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of ∼105 were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and β-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent IDS-VDS output as well as IDS-VGS transfer characteristics with a high on/off ratio (∼108) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.

AB - Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of ∼105 were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and β-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent IDS-VDS output as well as IDS-VGS transfer characteristics with a high on/off ratio (∼108) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems.

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KW - wide bandgap semiconductor

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