Heterosynaptic MoS2 Memtransistors Emulating Biological Neuromodulation for Energy-Efficient Neuromorphic Electronics

Woong Huh, Donghun Lee, Seonghoon Jang, Jung Hoon Kang, Tae Hyun Yoon, Jae Pil So, Yeon Ho Kim, Jong Chan Kim, Hong Gyu Park, Hu Young Jeong, Gunuk Wang, Chul Ho Lee

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Heterosynaptic neuromodulation is a key enabler for energy-efficient and high-level biological neural processing. However, such manifold synaptic modulation cannot be emulated using conventional memristors and synaptic transistors. Thus, reported herein is a three-terminal heterosynaptic memtransistor using an intentional-defect-generated molybdenum disulfide channel. Particularly, the defect-mediated space-charge-limited conduction in the ultrathin channel results in memristive switching characteristics between the source and drain terminals, which are further modulated using a gate terminal according to the gate-tuned filling of trap states. The device acts as an artificial synapse controlled by sub-femtojoule impulses from both the source and gate terminals, consuming lower energy than its biological counterpart. In particular, electrostatic gate modulation, corresponding to biological neuromodulation, additionally regulates the dynamic range and tuning rate of the synaptic weight, independent of the programming (source) impulses. Notably, this heterosynaptic modulation not only improves the learning accuracy and efficiency but also reduces energy consumption in the pattern recognition. Thus, the study presents a new route leading toward the realization of highly networked and energy-efficient neuromorphic electronics.

Original languageEnglish
Article number2211525
JournalAdvanced Materials
Volume35
Issue number24
DOIs
Publication statusPublished - 2023 Jun 15

Bibliographical note

Funding Information:
W.H. and D.L. contributed equally to this study. This research was supported by a National Research Foundation (NRF) of Korea grant, funded by the Korea government (MSIT) (2022M3H4A1A01010280, 2023R1A2C3005923, and 2017R1A5A1014862 (SRC Program: vdWMRC center)) and the KU-KIST School Project. D.L. acknowledges the support from the NRF of Korea funded by the Korea government (MSIT) (2021R1C1C2094189).

Funding Information:
W.H. and D.L. contributed equally to this study. This research was supported by a National Research Foundation (NRF) of Korea grant, funded by the Korea government (MSIT) (2022M3H4A1A01010280, 2023R1A2C3005923, and 2017R1A5A1014862 (SRC Program: vdWMRC center)) and the KU‐KIST School Project. D.L. acknowledges the support from the NRF of Korea funded by the Korea government (MSIT) (2021R1C1C2094189).

Publisher Copyright:
© 2023 Wiley-VCH GmbH.

Keywords

  • 2D materials
  • memtransistors
  • neuromorphic electronics
  • transition metal dichalcogenides

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering

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