High-breakdown-voltage InGaN/GaN MQW LED achieved by using a varied-barrier-growth-temperature method

Shi Jong Leem, Young Chul Shin, Eun Hong Kim, Chul Min Kim, Byoung Gyu Lee, Wan Ho Lee, Tae Geun Kim, Youngboo Moon

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We report the effect of the barrier growth temperature of InGaN/GaN multi-quantum wells on the breakdown voltage of light emitting diodes. We adopted a two-step varied-barrier-growth temperature method to improve the structural and the electrical properties of the InGaN/GaN MQW layers. The depth of the V defect of InGaN/GaN MQW surfaces was decreased up to 20 Å by using a GaN barrier layer grown at a high growth temperature of 1000 °C as compared to the conventional sample without varying the GaN barrier growth temperature. we found that the breakdown voltage increased to as high as about -25 V at a 10 μA reverse current.

Original languageEnglish
Pages (from-to)1219-1222
Number of pages4
JournalJournal of the Korean Physical Society
Issue number3
Publication statusPublished - 2009 Sept


  • Atomic force microscopy
  • Growth temperature
  • InGaN/GaN MQWs
  • Leakage current
  • V defect

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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