High-breakdown-voltage InGaN/GaN MQW LED achieved by using a varied-barrier-growth-temperature method

We report the effect of the barrier growth temperature of InGaN/GaN multi-quantum wells on the breakdown voltage of light emitting diodes. We adopted a two-step varied-barrier-growth temperature method to improve the structural and the electrical properties of the InGaN/GaN MQW layers. The depth of the V defect of InGaN/GaN MQW surfaces was decreased up to 20 Å by using a GaN barrier layer grown at a high growth temperature of 1000 °C as compared to the conventional sample without varying the GaN barrier growth temperature. we found that the breakdown voltage increased to as high as about -25 V at a 10 μA reverse current.