High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system

Jin Woo Ju; Cheul Ro Lee; Jong Hyeob Baek; Young Hee Lee; In Hwan Lee

doi:10.1143/JJAP.44.2506

High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system

Jin Woo Ju, Cheul Ro Lee, Jong Hyeob Baek, Young Hee Lee, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2% and 1.2nm, respectively. The epoxy molded LED lamp showed radiant power of 4mW at a forward current of 20mA. We note that the power is very high considering such a simple LED structure.

Original language	English
Pages (from-to)	2506-2508
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.44.2506
Publication status	Published - 2005 Apr
Externally published	Yes

Keywords

InGaN/GaN
MOCVD
MQW

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.2506

Cite this

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title = "High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system",

abstract = "We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2% and 1.2nm, respectively. The epoxy molded LED lamp showed radiant power of 4mW at a forward current of 20mA. We note that the power is very high considering such a simple LED structure.",

keywords = "InGaN/GaN, MOCVD, MQW",

author = "Ju, {Jin Woo} and Lee, {Cheul Ro} and Baek, {Jong Hyeob} and Lee, {Young Hee} and Lee, {In Hwan}",

year = "2005",

month = apr,

doi = "10.1143/JJAP.44.2506",

language = "English",

volume = "44",

pages = "2506--2508",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

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TY - JOUR

T1 - High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system

AU - Ju, Jin Woo

AU - Lee, Cheul Ro

AU - Baek, Jong Hyeob

AU - Lee, Young Hee

AU - Lee, In Hwan

PY - 2005/4

Y1 - 2005/4

N2 - We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2% and 1.2nm, respectively. The epoxy molded LED lamp showed radiant power of 4mW at a forward current of 20mA. We note that the power is very high considering such a simple LED structure.

AB - We have fabricated high brightness blue light emitting diode (LED) with InGaN/GaN multi-quantum well (MQW) which is sandwiched simply between n-GaN and p-GaN. The LED epitaxial structure was grown by a newly designed metal organic chemical vapor deposition (MOCVD) system with RF heater and vertical gas injection type showerhead. The reactor exhibited a good uniformity of temperature and gas velocity. The uniformity of layer thickness and PL wavelength was less 2% and 1.2nm, respectively. The epoxy molded LED lamp showed radiant power of 4mW at a forward current of 20mA. We note that the power is very high considering such a simple LED structure.

KW - InGaN/GaN

KW - MOCVD

KW - MQW

UR - http://www.scopus.com/inward/record.url?scp=21244441006&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.2506

DO - 10.1143/JJAP.44.2506

M3 - Article

AN - SCOPUS:21244441006

SN - 0021-4922

VL - 44

SP - 2506

EP - 2508

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 4 B

ER -

High brightness InGaN/GaN blue light emitting diode realized by a 6 × 2″ MOCVD system

Abstract

Keywords

ASJC Scopus subject areas

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