High-capacitance metal-insulator-metal capacitors using amorphous Sm2 Ti2 O7 thin film

J. C. Kim; Y. H. Jeong; J. B. Lim; K. P. Hong; S. Nahm; T. H. Ghong; Y. D. Kim

doi:10.1149/1.2768284

High-capacitance metal-insulator-metal capacitors using amorphous Sm2 Ti2 O7 thin film

J. C. Kim, Y. H. Jeong, J. B. Lim, K. P. Hong, S. Nahm, T. H. Ghong, Y. D. Kim

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Amorphous Sm2 Ti2 O7 (SmT) films were investigated to assess their potential use in metal-insulator-metal (MIM) capacitors. A 72 nm thick SmT film showed a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 0.12 nA cm2 at 2.0 V. The capacitance density increased with decreasing film thickness to 8.18 fFμ m2 for the 46 nm thick film. The 72 nm thick SmT film had small quadratic and linear voltage coefficients of capacitance of 158 ppm V2 and -283 ppmV, respectively, and a temperature coefficient of capacitance of 207 ppm°C at 100 kHz. Overall, amorphous SmT films are good candidate materials for MIM capacitors.

Original language	English
Pages (from-to)	G220-G223
Journal	Journal of the Electrochemical Society
Volume	154
Issue number	10
DOIs	https://doi.org/10.1149/1.2768284
Publication status	Published - 2007

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "High-capacitance metal-insulator-metal capacitors using amorphous Sm2 Ti2 O7 thin film",

abstract = "Amorphous Sm2 Ti2 O7 (SmT) films were investigated to assess their potential use in metal-insulator-metal (MIM) capacitors. A 72 nm thick SmT film showed a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 0.12 nA cm2 at 2.0 V. The capacitance density increased with decreasing film thickness to 8.18 fFμ m2 for the 46 nm thick film. The 72 nm thick SmT film had small quadratic and linear voltage coefficients of capacitance of 158 ppm V2 and -283 ppmV, respectively, and a temperature coefficient of capacitance of 207 ppm°C at 100 kHz. Overall, amorphous SmT films are good candidate materials for MIM capacitors.",

author = "Kim, {J. C.} and Jeong, {Y. H.} and Lim, {J. B.} and Hong, {K. P.} and S. Nahm and Ghong, {T. H.} and Kim, {Y. D.}",

year = "2007",

doi = "10.1149/1.2768284",

language = "English",

volume = "154",

pages = "G220--G223",

journal = "Journal of the Electrochemical Society",

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TY - JOUR

T1 - High-capacitance metal-insulator-metal capacitors using amorphous Sm2 Ti2 O7 thin film

AU - Kim, J. C.

AU - Jeong, Y. H.

AU - Lim, J. B.

AU - Hong, K. P.

AU - Nahm, S.

AU - Ghong, T. H.

AU - Kim, Y. D.

PY - 2007

Y1 - 2007

N2 - Amorphous Sm2 Ti2 O7 (SmT) films were investigated to assess their potential use in metal-insulator-metal (MIM) capacitors. A 72 nm thick SmT film showed a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 0.12 nA cm2 at 2.0 V. The capacitance density increased with decreasing film thickness to 8.18 fFμ m2 for the 46 nm thick film. The 72 nm thick SmT film had small quadratic and linear voltage coefficients of capacitance of 158 ppm V2 and -283 ppmV, respectively, and a temperature coefficient of capacitance of 207 ppm°C at 100 kHz. Overall, amorphous SmT films are good candidate materials for MIM capacitors.

AB - Amorphous Sm2 Ti2 O7 (SmT) films were investigated to assess their potential use in metal-insulator-metal (MIM) capacitors. A 72 nm thick SmT film showed a high capacitance density of 5.2 fFμ m2 with a low leakage current density of 0.12 nA cm2 at 2.0 V. The capacitance density increased with decreasing film thickness to 8.18 fFμ m2 for the 46 nm thick film. The 72 nm thick SmT film had small quadratic and linear voltage coefficients of capacitance of 158 ppm V2 and -283 ppmV, respectively, and a temperature coefficient of capacitance of 207 ppm°C at 100 kHz. Overall, amorphous SmT films are good candidate materials for MIM capacitors.

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DO - 10.1149/1.2768284

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JF - Journal of the Electrochemical Society

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High-capacitance metal-insulator-metal capacitors using amorphous Sm2 Ti2 O7 thin film

Abstract

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