High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers

T. G. Kim, M. Ogura

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

High characteristic temperature (To = approximately 322 K) is demonstrated near room-temperature with V-grooved. AlGaAs-GaAs multiple quantum wire (QWR) lasers grown by flow rate modulation epitaxy. The wavelength tuning rate of temperature Δλ/ΔT measured for 300 μm long uncoated lasers is approximately 0.19 nm/°C and that of injection current Δλ/ΔI is extremely small, in between 0.02 and 0.03 nm/mA in the temperature range 10 to 70 °C.

Original languageEnglish
Pages (from-to)185-187
Number of pages3
JournalSolid-State Electronics
Volume44
Issue number1
DOIs
Publication statusPublished - 2000 Jan
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) and was performed partially under the management of Femtosecond Technology Research Association (FESTA). Authors are grateful to Drs. M. Simizu, X.-L. Wang, H. Yajima and T. Sakamoto at ETL in Japan for their encouragement.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'High characteristic temperature (To = 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers'. Together they form a unique fingerprint.

Cite this