Abstract
In this study, high density phase change nano-pillar device (Tera-bit per inch2 data density) was fabricated on flexible substrates by thermal curing type nanoimprint lithography with high throughput at a relatively low temperature (120°C). Phase change nano-pillar was formed with on flexible poly (ethylene terephthalate) (PET) film, polyimide (PI) film, and stainless steel plate (SUS) substrate without any damage of substrate. The electrical property of the fabricated phase change nano-pillar device was confirmed by electrical signal measuring of conductive atomic force microscopy.
| Original language | English |
|---|---|
| Pages (from-to) | 2013-2016 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 88 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2011 Aug |
Bibliographical note
Funding Information:This work is supported by a Grant No. ( 2009K000069 ) from the Center for Nanoscale Mechatronics & Manufacturing , which is one of the 21st Century Frontier Research Programs, and the support program for the advancement of national research facilities and equipment, which are supported by the Ministry of Education, Science, and Technology, Korea. The authors thank to Dr. M.S. Hyun of National Nanofab Center for the operation of AFM (NFEC-2007-11-047855).
Keywords
- Flexible nano-device
- Nanoimprint lithography
- Phase change memory
- Phase change nano-pillar device
- Tera-bit record
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering