Abstract
High-density InGaAs/AlGaAs quantum wire (QWR) structures with a period of 430 nm were successfully grown by using constant metalorganic chemical vapor deposition growth technique in which submicron gratings were preserved even after an epitaxial growth of 1 μm thickness. The quantum confinement effect of the InGaAs/AlGaAs QWRs is strong due to the large band offset and enhanced migration of surface adsorbed III-group element species compared with the GaAs/AlGaAs QWRs. The photoluminescence signal of the InGaAs/AlGaAs QWRs was observed in the temperature range from 10 to 300 K with a relatively narrow full width at half maximum of <40 meV.
Original language | English |
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Pages (from-to) | 1486-1490 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 237-239 |
Issue number | 1 4 II |
DOIs | |
Publication status | Published - 2002 Apr |
Externally published | Yes |
Keywords
- A1. Photoluminescence
- A3. Metalorganic chemical vapor deposition
- A3. Quantum wire
- B3. Distributed feedback laser
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry