High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared

Woong Choi; Mi Yeon Cho; Aniruddha Konar; Jong Hak Lee; Gi Beom Cha; Soon Cheol Hong; Sangsig Kim; Jeongyong Kim; Debdeep Jena; Jinsoo Joo; Sunkook Kim

doi:10.1002/adma.201201909

High-detectivity multilayer MoS₂ phototransistors with spectral response from ultraviolet to infrared

Woong Choi, Mi Yeon Cho, Aniruddha Konar, Jong Hak Lee, Gi Beom Cha, Soon Cheol Hong, Sangsig Kim, Jeongyong Kim, Debdeep Jena, Jinsoo Joo, Sunkook Kim

Research output: Contribution to journal › Article › peer-review

921 Citations (Scopus)

Abstract

Phototransistors based on multilayer MoS₂ crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS₂ phototransistors. Multilayer MoS₂ phototransistors further exhibit high room temperature mobilities (>70 cm²V^-1s^-1), near-ideal subthreshold swings (∼70 mV decade^-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

Original language	English
Pages (from-to)	5832-5836
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	43
DOIs	https://doi.org/10.1002/adma.201201909
Publication status	Published - 2012 Nov 14

Keywords

MoS
phototransistors
transition metal dichalcogenide

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201201909

Cite this

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title = "High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared",

abstract = "Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V-1s-1), near-ideal subthreshold swings (∼70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.",

keywords = "MoS, phototransistors, transition metal dichalcogenide",

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AU - Choi, Woong

AU - Cho, Mi Yeon

AU - Konar, Aniruddha

AU - Lee, Jong Hak

AU - Cha, Gi Beom

AU - Hong, Soon Cheol

AU - Kim, Sangsig

AU - Kim, Jeongyong

AU - Jena, Debdeep

AU - Joo, Jinsoo

AU - Kim, Sunkook

PY - 2012/11/14

Y1 - 2012/11/14

N2 - Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V-1s-1), near-ideal subthreshold swings (∼70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

AB - Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm2V-1s-1), near-ideal subthreshold swings (∼70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

KW - MoS

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KW - transition metal dichalcogenide

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