High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors

Hyunsoo Kim; Sung Nam Lee; Yongjo Park; Tae Yeon Seong

doi:10.1109/LED.2008.921392

High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors

Hyunsoo Kim, Sung Nam Lee, Yongjo Park, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report on high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with metallic hybrid reflectors (MHRs). It is shown that the MHRs consisting of an injection part (with low p-contact resistance and intermediate reflectance) and a spreading part (with high p-contact resistance and good reflectance) can enhance current injection and overall light reflectivity. Compared with reference LEDs with single reflectors, LEDs fabricated with Ag-based MHRs give higher output power by 8.9% and a reduction in forward voltage by 0.02 V (at 20 mA), resulting in the improvement of the power efficiency by ∼10%.

Original language	English
Pages (from-to)	582-584
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	6
DOIs	https://doi.org/10.1109/LED.2008.921392
Publication status	Published - 2008 Jun

Keywords

Electrode
GaN
Light-emitting diode (LED)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2008.921392

Cite this

@article{5bc3d35d559e42dd839f7bd07d3e33d1,

title = "High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors",

abstract = "We report on high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with metallic hybrid reflectors (MHRs). It is shown that the MHRs consisting of an injection part (with low p-contact resistance and intermediate reflectance) and a spreading part (with high p-contact resistance and good reflectance) can enhance current injection and overall light reflectivity. Compared with reference LEDs with single reflectors, LEDs fabricated with Ag-based MHRs give higher output power by 8.9% and a reduction in forward voltage by 0.02 V (at 20 mA), resulting in the improvement of the power efficiency by ∼10%.",

keywords = "Electrode, GaN, Light-emitting diode (LED)",

author = "Hyunsoo Kim and Lee, {Sung Nam} and Yongjo Park and Seong, {Tae Yeon}",

year = "2008",

month = jun,

doi = "10.1109/LED.2008.921392",

language = "English",

volume = "29",

pages = "582--584",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors

AU - Kim, Hyunsoo

AU - Lee, Sung Nam

AU - Park, Yongjo

AU - Seong, Tae Yeon

PY - 2008/6

Y1 - 2008/6

N2 - We report on high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with metallic hybrid reflectors (MHRs). It is shown that the MHRs consisting of an injection part (with low p-contact resistance and intermediate reflectance) and a spreading part (with high p-contact resistance and good reflectance) can enhance current injection and overall light reflectivity. Compared with reference LEDs with single reflectors, LEDs fabricated with Ag-based MHRs give higher output power by 8.9% and a reduction in forward voltage by 0.02 V (at 20 mA), resulting in the improvement of the power efficiency by ∼10%.

AB - We report on high-efficiency GaN-based light-emitting diodes (LEDs) fabricated with metallic hybrid reflectors (MHRs). It is shown that the MHRs consisting of an injection part (with low p-contact resistance and intermediate reflectance) and a spreading part (with high p-contact resistance and good reflectance) can enhance current injection and overall light reflectivity. Compared with reference LEDs with single reflectors, LEDs fabricated with Ag-based MHRs give higher output power by 8.9% and a reduction in forward voltage by 0.02 V (at 20 mA), resulting in the improvement of the power efficiency by ∼10%.

KW - Electrode

KW - GaN

KW - Light-emitting diode (LED)

UR - http://www.scopus.com/inward/record.url?scp=44849089269&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.921392

DO - 10.1109/LED.2008.921392

M3 - Article

AN - SCOPUS:44849089269

SN - 0741-3106

VL - 29

SP - 582

EP - 584

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

High-efficiency GaN-based light-emitting diodes fabricated with metallic hybrid reflectors

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this