Abstract
We report the enhanced light extraction of a square lattice photonic crystal GaN LED with a lattice constant of 460 nm and holes with a depth of 500 nm drilled through InGaN/GaN multiple quantum wells (MQWs) using laser holography and inductively coupled plasma reactive ion etching. In spite of the etching through the MQWs leading to undesirable surface recombination, the photonic crystal LEDs exhibited 137 times higher light extraction than that of the LEDs without photonic crystals at 20 mA. Theoretical studies using the 3-dimensional finite-difference time domain method show that the increase of the extraction efficiency with increasing etch depth is due to the increase of the density of the leaky modes into the air.
Original language | English |
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Pages (from-to) | 116-120 |
Number of pages | 5 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 46 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2010 |
Bibliographical note
Funding Information:Manuscript received May 01, 2009; revised July 10, 2009. Current version published December 09, 2009. This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) through project number [F01-2007-000-11760-0] and the Quantum Photonic Science Research Center, Korea, and also supported by a Korea Research Foundation grant funded by the Korean Government (MOEHRD) (KRF-2008-D00074).
Keywords
- Index terms-finite-difference time domain method
- Light extraction efficiency
- Light-emitting diode
- Nitride-based semiconductor
- Photonic crystal
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering