High efficiency gan light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices

Young Chul Shin; Dong Ho Kim; Eun Hong Kim; Joong Mok Park; Kai Ming Ho; Kristen Constant; Jong Ho Choe; Q. Han Park; Han Youl Ryu; Jong Hyeob Baek; Tak Jung; Tae Geun Kim

doi:10.1109/JQE.2009.2030150

High efficiency gan light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices

Young Chul Shin, Dong Ho Kim, Eun Hong Kim, Joong Mok Park, Kai Ming Ho, Kristen Constant, Jong Ho Choe, Q. Han Park, Han Youl Ryu, Jong Hyeob Baek, Tak Jung, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We report the enhanced light extraction of a square lattice photonic crystal GaN LED with a lattice constant of 460 nm and holes with a depth of 500 nm drilled through InGaN/GaN multiple quantum wells (MQWs) using laser holography and inductively coupled plasma reactive ion etching. In spite of the etching through the MQWs leading to undesirable surface recombination, the photonic crystal LEDs exhibited 137 times higher light extraction than that of the LEDs without photonic crystals at 20 mA. Theoretical studies using the 3-dimensional finite-difference time domain method show that the increase of the extraction efficiency with increasing etch depth is due to the increase of the density of the leaky modes into the air.

Original language	English
Pages (from-to)	116-120
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	46
Issue number	1
DOIs	https://doi.org/10.1109/JQE.2009.2030150
Publication status	Published - 2010

Keywords

Index terms-finite-difference time domain method
Light extraction efficiency
Light-emitting diode
Nitride-based semiconductor
Photonic crystal

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2009.2030150

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Shin, Y. C., Kim, D. H., Kim, E. H., Park, J. M., Ho, K. M., Constant, K., Choe, J. H., Han Park, Q., Ryu, H. Y., Baek, J. H., Jung, T., & Kim, T. G. (2010). High efficiency gan light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices. IEEE Journal of Quantum Electronics, 46(1), 116-120. https://doi.org/10.1109/JQE.2009.2030150

@article{a7f78c3039d943f3b3e39cea2d165cc5,

title = "High efficiency gan light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices",

abstract = "We report the enhanced light extraction of a square lattice photonic crystal GaN LED with a lattice constant of 460 nm and holes with a depth of 500 nm drilled through InGaN/GaN multiple quantum wells (MQWs) using laser holography and inductively coupled plasma reactive ion etching. In spite of the etching through the MQWs leading to undesirable surface recombination, the photonic crystal LEDs exhibited 137 times higher light extraction than that of the LEDs without photonic crystals at 20 mA. Theoretical studies using the 3-dimensional finite-difference time domain method show that the increase of the extraction efficiency with increasing etch depth is due to the increase of the density of the leaky modes into the air.",

keywords = "Index terms-finite-difference time domain method, Light extraction efficiency, Light-emitting diode, Nitride-based semiconductor, Photonic crystal",

author = "Shin, {Young Chul} and Kim, {Dong Ho} and Kim, {Eun Hong} and Park, {Joong Mok} and Ho, {Kai Ming} and Kristen Constant and Choe, {Jong Ho} and {Han Park}, Q. and Ryu, {Han Youl} and Baek, {Jong Hyeob} and Tak Jung and Kim, {Tae Geun}",

note = "Funding Information: Manuscript received May 01, 2009; revised July 10, 2009. Current version published December 09, 2009. This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) through project number [F01-2007-000-11760-0] and the Quantum Photonic Science Research Center, Korea, and also supported by a Korea Research Foundation grant funded by the Korean Government (MOEHRD) (KRF-2008-D00074).",

year = "2010",

doi = "10.1109/JQE.2009.2030150",

language = "English",

volume = "46",

pages = "116--120",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

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AU - Shin, Young Chul

AU - Kim, Dong Ho

AU - Kim, Eun Hong

AU - Park, Joong Mok

AU - Ho, Kai Ming

AU - Constant, Kristen

AU - Choe, Jong Ho

AU - Han Park, Q.

AU - Ryu, Han Youl

AU - Baek, Jong Hyeob

AU - Jung, Tak

AU - Kim, Tae Geun

N1 - Funding Information: Manuscript received May 01, 2009; revised July 10, 2009. Current version published December 09, 2009. This work was supported by a Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) through project number [F01-2007-000-11760-0] and the Quantum Photonic Science Research Center, Korea, and also supported by a Korea Research Foundation grant funded by the Korean Government (MOEHRD) (KRF-2008-D00074).

PY - 2010

Y1 - 2010

N2 - We report the enhanced light extraction of a square lattice photonic crystal GaN LED with a lattice constant of 460 nm and holes with a depth of 500 nm drilled through InGaN/GaN multiple quantum wells (MQWs) using laser holography and inductively coupled plasma reactive ion etching. In spite of the etching through the MQWs leading to undesirable surface recombination, the photonic crystal LEDs exhibited 137 times higher light extraction than that of the LEDs without photonic crystals at 20 mA. Theoretical studies using the 3-dimensional finite-difference time domain method show that the increase of the extraction efficiency with increasing etch depth is due to the increase of the density of the leaky modes into the air.

AB - We report the enhanced light extraction of a square lattice photonic crystal GaN LED with a lattice constant of 460 nm and holes with a depth of 500 nm drilled through InGaN/GaN multiple quantum wells (MQWs) using laser holography and inductively coupled plasma reactive ion etching. In spite of the etching through the MQWs leading to undesirable surface recombination, the photonic crystal LEDs exhibited 137 times higher light extraction than that of the LEDs without photonic crystals at 20 mA. Theoretical studies using the 3-dimensional finite-difference time domain method show that the increase of the extraction efficiency with increasing etch depth is due to the increase of the density of the leaky modes into the air.

KW - Index terms-finite-difference time domain method

KW - Light extraction efficiency

KW - Light-emitting diode

KW - Nitride-based semiconductor

KW - Photonic crystal

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

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High efficiency gan light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices

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