High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

Hyun Yong Yu; Shen Ren; Woo Shik Jung; Ali K. Okyay; David A.B. Miller; Krishna C. Saraswat

doi:10.1109/LED.2009.2030905

High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

Hyun Yong Yu, Shen Ren, Woo Shik Jung, Ali K. Okyay, David A.B. Miller, Krishna C. Saraswat

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.

Original language	English
Pages (from-to)	1161-1163
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	11
DOIs	https://doi.org/10.1109/LED.2009.2030905
Publication status	Published - 2009
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received August 9, 2009. First published October 2, 2009; current version published October 23, 2009. This work was supported in part by FCRP Interconnect Focus Center. The review of this letter was arranged by Editor P. K.-L. Yu. H.-Y. Yu, S. Ren, W. S. Jung, D. A. B. Miller, and K. C. Saraswat are with the Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA (e-mail: yuhykr@stanford.edu). A. K. Okyay is with the Department of Electrical Engineering, Bilkent University, Ankara TR-06800, Turkey. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2009.2030905 Fig. 1. (a) Schematic diagram of the cross section of normal incidence Ge/Si p-i-n photodiode. (b) Scanning electron micrograph of the circular mesas of the photodiodes. The circular p-i-n device has the ring-shaped contact with a ring width of 50 μm.

Keywords

Germanium
Photodiode
Selective
Strain
Tensile

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2009.2030905

Cite this

@article{e44da44711b44b25a59eea1369becd5f,

title = "High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration",

abstract = "We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.",

keywords = "Germanium, Photodiode, Selective, Strain, Tensile",

author = "Yu, {Hyun Yong} and Shen Ren and Jung, {Woo Shik} and Okyay, {Ali K.} and Miller, {David A.B.} and Saraswat, {Krishna C.}",

note = "Funding Information: Manuscript received August 9, 2009. First published October 2, 2009; current version published October 23, 2009. This work was supported in part by FCRP Interconnect Focus Center. The review of this letter was arranged by Editor P. K.-L. Yu. H.-Y. Yu, S. Ren, W. S. Jung, D. A. B. Miller, and K. C. Saraswat are with the Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA (e-mail: yuhykr@stanford.edu). A. K. Okyay is with the Department of Electrical Engineering, Bilkent University, Ankara TR-06800, Turkey. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2009.2030905 Fig. 1. (a) Schematic diagram of the cross section of normal incidence Ge/Si p-i-n photodiode. (b) Scanning electron micrograph of the circular mesas of the photodiodes. The circular p-i-n device has the ring-shaped contact with a ring width of 50 μm.",

year = "2009",

doi = "10.1109/LED.2009.2030905",

language = "English",

volume = "30",

pages = "1161--1163",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

AU - Yu, Hyun Yong

AU - Ren, Shen

AU - Jung, Woo Shik

AU - Okyay, Ali K.

AU - Miller, David A.B.

AU - Saraswat, Krishna C.

N1 - Funding Information: Manuscript received August 9, 2009. First published October 2, 2009; current version published October 23, 2009. This work was supported in part by FCRP Interconnect Focus Center. The review of this letter was arranged by Editor P. K.-L. Yu. H.-Y. Yu, S. Ren, W. S. Jung, D. A. B. Miller, and K. C. Saraswat are with the Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA (e-mail: yuhykr@stanford.edu). A. K. Okyay is with the Department of Electrical Engineering, Bilkent University, Ankara TR-06800, Turkey. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2009.2030905 Fig. 1. (a) Schematic diagram of the cross section of normal incidence Ge/Si p-i-n photodiode. (b) Scanning electron micrograph of the circular mesas of the photodiodes. The circular p-i-n device has the ring-shaped contact with a ring width of 50 μm.

PY - 2009

Y1 - 2009

N2 - We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.

AB - We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications.

KW - Germanium

KW - Photodiode

KW - Selective

KW - Strain

KW - Tensile

UR - http://www.scopus.com/inward/record.url?scp=70350618469&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2030905

DO - 10.1109/LED.2009.2030905

M3 - Article

AN - SCOPUS:70350618469

SN - 0741-3106

VL - 30

SP - 1161

EP - 1163

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

High-efficiency p-i-n photodetectors on selective-area-grown ge for monolithic integration

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this