High-Efficiency Silicon Nanowire Array Near Infrared Photodetectors via Length Control and SiOx Surface Passivation

Bongkwon Son, Sang Ho Shin, Zhi Jun Zhao, Byeong Kwon Ju, Jun Ho Jeong, Munho Kim, Chuan Seng Tan

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon (Si) nanowire (NW) array is a promising light-trapping platform due to the strong interaction between light and nanostructure. A photodetector benefits from the improved optical absorption in the Si NW array. Although the optical absorption increases with the NW length, the large NW length is not always preferable owing to the large surface area. Herein, the systematic study on the Si NW array photodetectors with varied NW lengths is investigated. It is revealed that the photodetectors with 1 µm length provide a highest responsivity of 0.65 A W−1 and a specific detectivity of 1.40 × 109 cm Hz1/2 W−1 at the wavelength of 1000 nm, including the dark current of 54 µA at 1 V. In addition, the silicon oxide (SiOx) surface passivation is introduced to induce the high photogain. As a result, the responsivity is improved by 13 times (0.55 A W−1) at 1100 nm. This work proposes high-efficiency Si NW array photodetectors by the NW array length control and the SiOx surface passivation.

Original languageEnglish
Article number2300131
JournalAdvanced Materials Technologies
Volume8
Issue number15
DOIs
Publication statusPublished - 2023 Aug 11

Bibliographical note

Funding Information:
B.S., S.‐H.S., and Z.‐J.Z. contributed equally to this work. This work was supported by the National Research Foundation, Singapore, under its Competitive Research Program (CRP Award NRF‐CRP19‐2017‐01), A*STAR Programmatic Funds (Program No. A18A7b0058), AME IRG grant (Grant No. A20E5c0095), Ministry of Education AcRF Tier 1 (Grant No. 2021‐T1‐002‐031 (RG112/21)), and Ministry of Education AcRF Tier 2 (Grant Nos. T2EP50120‐0001 and T2EP50121‐0002). S.‐H.S. acknowledges Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF‐2022R1I1A1A01053909) and the Brain Korea 21 Project in 2023. The authors acknowledge the support of the Nanyang NanoFabrication Centre (N2FC) for device fabrication and Facility for Analysis, Characterisation, Testing and Simulation (FACTS) for supporting the XPS data.

Publisher Copyright:
© 2023 Wiley-VCH GmbH.

Keywords

  • nanostructure
  • photodetectors
  • Si nanowires

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Industrial and Manufacturing Engineering

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