High-efficiency SOI-based metalenses at telecommunication wavelengths

Taesu Ryu; Moohyuk Kim; Yongsop Hwang; Myung Ki Kim; Jin Kyu Yang

doi:10.1515/nanoph-2022-0480

High-efficiency SOI-based metalenses at telecommunication wavelengths

Taesu Ryu, Moohyuk Kim, Yongsop Hwang, Myung Ki Kim, Jin Kyu Yang

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-Thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC.

Original language	English
Pages (from-to)	4697-4704
Number of pages	8
Journal	Nanophotonics
Volume	11
Issue number	21
DOIs	https://doi.org/10.1515/nanoph-2022-0480
Publication status	Published - 2022 Dec 1

Bibliographical note

Funding Information:
Research funding: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (No. 2020R1A2C1014498) and a research grant from Kongju National University in 2021. This work was partly supported by the KIST Institutional Program (2E31531-22-071) and KU-KIST School Project.

Publisher Copyright:
© 2022 the author(s), published by De Gruyter, Berlin/Boston.

Keywords

metalens
metasurface
silicon photonics

ASJC Scopus subject areas

Biotechnology
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1515/nanoph-2022-0480

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@article{2e65d9bf482346948fd3ce37ab691d7c,

title = "High-efficiency SOI-based metalenses at telecommunication wavelengths",

abstract = "We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-Thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC.",

keywords = "metalens, metasurface, silicon photonics",

author = "Taesu Ryu and Moohyuk Kim and Yongsop Hwang and Kim, {Myung Ki} and Yang, {Jin Kyu}",

note = "Funding Information: Research funding: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (No. 2020R1A2C1014498) and a research grant from Kongju National University in 2021. This work was partly supported by the KIST Institutional Program (2E31531-22-071) and KU-KIST School Project. Publisher Copyright: {\textcopyright} 2022 the author(s), published by De Gruyter, Berlin/Boston.",

year = "2022",

month = dec,

day = "1",

doi = "10.1515/nanoph-2022-0480",

language = "English",

volume = "11",

pages = "4697--4704",

journal = "Nanophotonics",

issn = "2192-8606",

publisher = "Walter De Gruyter",

number = "21",

}

TY - JOUR

T1 - High-efficiency SOI-based metalenses at telecommunication wavelengths

AU - Ryu, Taesu

AU - Kim, Moohyuk

AU - Hwang, Yongsop

AU - Kim, Myung Ki

AU - Yang, Jin Kyu

N1 - Funding Information: Research funding: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (No. 2020R1A2C1014498) and a research grant from Kongju National University in 2021. This work was partly supported by the KIST Institutional Program (2E31531-22-071) and KU-KIST School Project. Publisher Copyright: © 2022 the author(s), published by De Gruyter, Berlin/Boston.

PY - 2022/12/1

Y1 - 2022/12/1

N2 - We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-Thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC.

AB - We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-Thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC.

KW - metalens

KW - metasurface

KW - silicon photonics

UR - http://www.scopus.com/inward/record.url?scp=85141265035&partnerID=8YFLogxK

U2 - 10.1515/nanoph-2022-0480

DO - 10.1515/nanoph-2022-0480

M3 - Article

AN - SCOPUS:85141265035

SN - 2192-8606

VL - 11

SP - 4697

EP - 4704

JO - Nanophotonics

JF - Nanophotonics

IS - 21

ER -

High-efficiency SOI-based metalenses at telecommunication wavelengths

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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