We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-Thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC.
Bibliographical noteFunding Information:
Research funding: This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (No. 2020R1A2C1014498) and a research grant from Kongju National University in 2021. This work was partly supported by the KIST Institutional Program (2E31531-22-071) and KU-KIST School Project.
© 2022 the author(s), published by De Gruyter, Berlin/Boston.
- silicon photonics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering