High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

Sun Kyung Kim; Jin Wook Lee; Ho Seok Ee; Yong Tae Moon; Soon Hong Kwon; Hoki Kwon; Hong Gyu Park

doi:10.1364/OE.18.011025

High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

Sun Kyung Kim, Jin Wook Lee, Ho Seok Ee, Yong Tae Moon, Soon Hong Kwon, Hoki Kwon, Hong Gyu Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We demonstrate a highly-efficient, large-area (1×1 mm²) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ∼1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.

Original language	English
Pages (from-to)	11025-11032
Number of pages	8
Journal	Optics Express
Volume	18
Issue number	11
DOIs	https://doi.org/10.1364/OE.18.011025
Publication status	Published - 2010 May 24

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "We demonstrate a highly-efficient, large-area (1×1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ∼1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.",

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AU - Kim, Sun Kyung

AU - Lee, Jin Wook

AU - Ee, Ho Seok

AU - Moon, Yong Tae

AU - Kwon, Soon Hong

AU - Kwon, Hoki

AU - Park, Hong Gyu

PY - 2010/5/24

Y1 - 2010/5/24

N2 - We demonstrate a highly-efficient, large-area (1×1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ∼1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.

AB - We demonstrate a highly-efficient, large-area (1×1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ∼1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.

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High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

Abstract

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