High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters

Sun Kyung Kim, Jin Wook Lee, Ho Seok Ee, Yong Tae Moon, Soon Hong Kwon, Hoki Kwon, Hong Gyu Park

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


We demonstrate a highly-efficient, large-area (1×1 mm2) GaN slab light-emitting diode using a vertically directional emitter produced from constructive interference. The vertical radiation can be coupled effectively into leaky modes from the beginning and thus a high-extraction efficiency can be expected with reduced material absorption. The far-field measurements show that the desired vertical emission profiles are obtained by varying the thickness of the dielectric layer between the emitter and bottom silver mirror. With the combination of a light extractor of a randomly textured surface, the output power was increased ∼1.4 fold compared to a non-patterned device at a standard current of 350 mA without electrical degradation.

Original languageEnglish
Pages (from-to)11025-11032
Number of pages8
JournalOptics Express
Issue number11
Publication statusPublished - 2010 May 24

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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