High energy proton irradiation effects on SiC Schottky rectifiers

S. Nigam; Jihyun Kim; F. Ren; G. Y. Chung; M. F. MacMillan; R. Dwivedi; T. N. Fogarty; R. Wilkins; K. K. Allums; C. R. Abernathy; S. J. Pearton; J. R. Williams

doi:10.1063/1.1509468

High energy proton irradiation effects on SiC Schottky rectifiers

S. Nigam, Jihyun Kim, F. Ren, G. Y. Chung, M. F. MacMillan, R. Dwivedi, T. N. Fogarty, R. Wilkins, K. K. Allums, C. R. Abernathy, S. J. Pearton, J. R. Williams

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Abstract

4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×10⁷- 5×10⁹cm^-2. The reverse breakdown voltage decreased from ∼500V in unirradiated devices to ∼-450V after the highest proton dose. The reverse leakage current at -250V was approximately doubled under these conditions. The forward current at -2V decreased by ∼1% (fluence of 5×10⁷cm^-2) to ∼42% (fluence of 5×10 ⁹cm^-2), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ≤5×10⁸cm^-2, but were more strongly affected (increase of 40%-75%) at the highest dose employed.

Original language	English
Pages (from-to)	2385-2387
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	13
DOIs	https://doi.org/10.1063/1.1509468
Publication status	Published - 2002 Sept 23
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1509468

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title = "High energy proton irradiation effects on SiC Schottky rectifiers",

abstract = "4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107- 5×109cm-2. The reverse breakdown voltage decreased from ∼500V in unirradiated devices to ∼-450V after the highest proton dose. The reverse leakage current at -250V was approximately doubled under these conditions. The forward current at -2V decreased by ∼1% (fluence of 5×107cm-2) to ∼42% (fluence of 5×10 9cm-2), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ≤5×108cm-2, but were more strongly affected (increase of 40%-75%) at the highest dose employed.",

author = "S. Nigam and Jihyun Kim and F. Ren and Chung, {G. Y.} and MacMillan, {M. F.} and R. Dwivedi and Fogarty, {T. N.} and R. Wilkins and Allums, {K. K.} and Abernathy, {C. R.} and Pearton, {S. J.} and Williams, {J. R.}",

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doi = "10.1063/1.1509468",

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TY - JOUR

T1 - High energy proton irradiation effects on SiC Schottky rectifiers

AU - Nigam, S.

AU - Kim, Jihyun

AU - Ren, F.

AU - Chung, G. Y.

AU - MacMillan, M. F.

AU - Dwivedi, R.

AU - Fogarty, T. N.

AU - Wilkins, R.

AU - Allums, K. K.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Williams, J. R.

PY - 2002/9/23

Y1 - 2002/9/23

N2 - 4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107- 5×109cm-2. The reverse breakdown voltage decreased from ∼500V in unirradiated devices to ∼-450V after the highest proton dose. The reverse leakage current at -250V was approximately doubled under these conditions. The forward current at -2V decreased by ∼1% (fluence of 5×107cm-2) to ∼42% (fluence of 5×10 9cm-2), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ≤5×108cm-2, but were more strongly affected (increase of 40%-75%) at the highest dose employed.

AB - 4H-SiC Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107- 5×109cm-2. The reverse breakdown voltage decreased from ∼500V in unirradiated devices to ∼-450V after the highest proton dose. The reverse leakage current at -250V was approximately doubled under these conditions. The forward current at -2V decreased by ∼1% (fluence of 5×107cm-2) to ∼42% (fluence of 5×10 9cm-2), while the current at lower biases was increased due to the introduction of defect centers. The ideality factor, on-state resistance, and forward turn-on voltage showed modest increases for fluences of ≤5×108cm-2, but were more strongly affected (increase of 40%-75%) at the highest dose employed.

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DO - 10.1063/1.1509468

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

High energy proton irradiation effects on SiC Schottky rectifiers

Abstract

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