High H2 sensing behavior of TiO2 films formed by thermal oxidation

Youn Ki Jun, Hyun Su Kim, Jong Heun Lee, Seong Hyeon Hong

Research output: Contribution to journalArticlepeer-review

69 Citations (Scopus)


A highly sensitive H2 gas sensor was prepared by the thermal oxidation of a Ti plate at 600-1000 °C. The H2 sensitivity (the ratio of the resistances between N2 and 1.0% H2 balanced with N2) of the oxidized TiO2 increased exponentially with increasing oxidation temperature up to 900 °C but decreased drastically at 1000 °C. The maximum sensitivity to 1.0% H2 was 1.2 × 106, which is the highest value reported in the literature. The mechanism for the enhanced H2 sensing was examined by investigating the phase, thickness and morphology of the oxidized TiO2 layer and the sensor response time. The thermally oxidized specimens exhibited an approximately linear dependence of the sensitivity on the H2 concentrations from 50 to 10,000 ppm, and excellent sensitivity (∼10 3) was still obtained in the sensor operated at temperatures as low as 150 °C.

Original languageEnglish
Pages (from-to)264-270
Number of pages7
JournalSensors and Actuators, B: Chemical
Issue number1 SPEC. ISS.
Publication statusPublished - 2005 May 27

Bibliographical note

Funding Information:
This work was supported by the Nano System Institute-National Core Research Center program of KOSEF at Seoul National University, Korea.

Copyright 2018 Elsevier B.V., All rights reserved.


  • H sensor
  • Porous layer
  • Thermal oxidation
  • TiO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry


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