Abstract
Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a copolymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators for fabricating organic thin-film transistors. An organic semiconductor (5, 5′-(9,10-bis((4-hexylphenyl)ethynyl)anthracene- 2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e., 0.31cm2 V -1 s-1 (Ion/Ioff=1.0× 10 4).
Original language | English |
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Article number | 103307 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2010 |
Bibliographical note
Funding Information:This research was supported by a Grant No. F0004011-2009-32 from Information Display R&D Center, one of the Knowledge Economy Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. and by NBIT program (Grant No. K2070200068808A040001710, KICOS, MOST and AFOSR, 2008-2009).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)