High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators

Youn Sun Kim; Ki Hwa Jung; U. Ra Lee; Kyung Hwan Kim; Mai Ha Hoang; Jung Il Jin; Dong Hoon Choi

doi:10.1063/1.3299022

High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators

Youn Sun Kim, Ki Hwa Jung, U. Ra Lee, Kyung Hwan Kim, Mai Ha Hoang, Jung Il Jin, Dong Hoon Choi

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a copolymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators for fabricating organic thin-film transistors. An organic semiconductor (5, 5′-(9,10-bis((4-hexylphenyl)ethynyl)anthracene- 2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e., 0.31cm² V _-1 s_-1 (I_on/I_off=1.0× 10 ⁴).

Original language	English
Article number	103307
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3299022
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{81fc7dc9480d4f71a993eee739118a5c,

title = "High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators",

abstract = "Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a copolymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators for fabricating organic thin-film transistors. An organic semiconductor (5, 5′-(9,10-bis((4-hexylphenyl)ethynyl)anthracene- 2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e., 0.31cm2 V -1 s-1 (Ion/Ioff=1.0× 10 4).",

author = "Kim, {Youn Sun} and Jung, {Ki Hwa} and Lee, {U. Ra} and Kim, {Kyung Hwan} and Hoang, {Mai Ha} and Jin, {Jung Il} and Choi, {Dong Hoon}",

note = "Funding Information: This research was supported by a Grant No. F0004011-2009-32 from Information Display R&D Center, one of the Knowledge Economy Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. and by NBIT program (Grant No. K2070200068808A040001710, KICOS, MOST and AFOSR, 2008-2009).",

year = "2010",

doi = "10.1063/1.3299022",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

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TY - JOUR

T1 - High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators

AU - Kim, Youn Sun

AU - Jung, Ki Hwa

AU - Lee, U. Ra

AU - Kim, Kyung Hwan

AU - Hoang, Mai Ha

AU - Jin, Jung Il

AU - Choi, Dong Hoon

N1 - Funding Information: This research was supported by a Grant No. F0004011-2009-32 from Information Display R&D Center, one of the Knowledge Economy Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. and by NBIT program (Grant No. K2070200068808A040001710, KICOS, MOST and AFOSR, 2008-2009).

PY - 2010

Y1 - 2010

N2 - Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a copolymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators for fabricating organic thin-film transistors. An organic semiconductor (5, 5′-(9,10-bis((4-hexylphenyl)ethynyl)anthracene- 2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e., 0.31cm2 V -1 s-1 (Ion/Ioff=1.0× 10 4).

AB - Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a copolymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators for fabricating organic thin-film transistors. An organic semiconductor (5, 5′-(9,10-bis((4-hexylphenyl)ethynyl)anthracene- 2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e., 0.31cm2 V -1 s-1 (Ion/Ioff=1.0× 10 4).

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High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators

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