High-Performance 2D MoS 2 Phototransistor for Photo Logic Gate and Image Sensor

Young Tack Lee, Ji Hoon Kang, Kisung Kwak, Jongtae Ahn, Hyun Tae Choi, Byeong Kwon Ju, Seyed Hossein Shokouh, Seongil Im, Min Chul Park, Do Kyung Hwang

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)


Two-dimensional (2D) MoS 2 is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report a high-performance MoS 2 phototransistor that exhibits a photoresponse in the 400-700 nm range with the maximum responsivity of over 1 × 10 4 A/W. As a more sophisticated optoelectronic application than a simple unit device, it is implemented in a photoinverter (NOT logic gate) connected to an external resistor, which clearly shows photoinduced static and dynamic characteristics. Furthermore, we demonstrate a prototype visible imager using the MoS 2 photoinverter as imaging pixels as an excellent example of advanced developments in an optoelectronic system based on the 2D semiconductors.

Original languageEnglish
Pages (from-to)4745-4750
Number of pages6
JournalACS Photonics
Issue number12
Publication statusPublished - 2018 Dec 19

Bibliographical note

Publisher Copyright:
Copyright © 2018 American Chemical Society.


  • MoS
  • graphene contact
  • image sensor
  • photoinverter
  • phototransistor
  • two-dimensional van der Waals materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biotechnology
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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