High-performance amorphous indium oxide thin-film transistors fabricated by an aqueous solution process at low temperature

Kookhyun Choi; Minseok Kim; Seongpil Chang; Tae Yeon Oh; Shin Woo Jeong; Hyeon Jun Ha; Byeong Kwon Ju

doi:10.7567/JJAP.52.060204

High-performance amorphous indium oxide thin-film transistors fabricated by an aqueous solution process at low temperature

Kookhyun Choi, Minseok Kim, Seongpil Chang, Tae Yeon Oh, Shin Woo Jeong, Hyeon Jun Ha, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In₂O₃) TFTs prepared using different annealing temperatures. Even though the a-In₂O₃ TFTs were annealed at 200 °C, electrical characteristics of aqueous solution-processed a-In₂O₃ TFTs were obtained. High performance such as a saturation mobility of 8.6 cm² V^-1 s^-1 and an on/off current ratio of over 10⁶ was exhibited by a-In ₂O₃ TFTs annealed at 250 °C.

Original language	English
Article number	060204
Journal	Japanese journal of applied physics
Volume	52
Issue number	6 PART 1
DOIs	https://doi.org/10.7567/JJAP.52.060204
Publication status	Published - 2013 Jun

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "High-performance amorphous indium oxide thin-film transistors fabricated by an aqueous solution process at low temperature",

abstract = "This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In2O3) TFTs prepared using different annealing temperatures. Even though the a-In2O3 TFTs were annealed at 200 °C, electrical characteristics of aqueous solution-processed a-In2O3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm2 V-1 s-1 and an on/off current ratio of over 106 was exhibited by a-In 2O3 TFTs annealed at 250 °C.",

author = "Kookhyun Choi and Minseok Kim and Seongpil Chang and Oh, {Tae Yeon} and Jeong, {Shin Woo} and Ha, {Hyeon Jun} and Ju, {Byeong Kwon}",

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AU - Choi, Kookhyun

AU - Kim, Minseok

AU - Chang, Seongpil

AU - Oh, Tae Yeon

AU - Jeong, Shin Woo

AU - Ha, Hyeon Jun

AU - Ju, Byeong Kwon

PY - 2013/6

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AB - This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In2O3) TFTs prepared using different annealing temperatures. Even though the a-In2O3 TFTs were annealed at 200 °C, electrical characteristics of aqueous solution-processed a-In2O3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm2 V-1 s-1 and an on/off current ratio of over 106 was exhibited by a-In 2O3 TFTs annealed at 250 °C.

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High-performance amorphous indium oxide thin-film transistors fabricated by an aqueous solution process at low temperature

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