This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In2O3) TFTs prepared using different annealing temperatures. Even though the a-In2O3 TFTs were annealed at 200 °C, electrical characteristics of aqueous solution-processed a-In2O3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm2 V-1 s-1 and an on/off current ratio of over 106 was exhibited by a-In 2O3 TFTs annealed at 250 °C.
|Journal||Japanese journal of applied physics|
|Issue number||6 PART 1|
|Publication status||Published - 2013 Jun|
ASJC Scopus subject areas
- Physics and Astronomy(all)