High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array

Gunuk Wang; Adam C. Lauchner; Jian Lin; Douglas Natelson; Krishna V. Palem; James M. Tour

doi:10.1002/adma.201302047

High-performance and low-power rewritable SiO_x 1 kbit one diode-one resistor crossbar memory array

Gunuk Wang, Adam C. Lauchner, Jian Lin, Douglas Natelson, Krishna V. Palem, James M. Tour

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

An entire 1-kilobit crossbar device based upon SiO_x resistive memories with integrated diodes has been made. The SiO_x-based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

Original language	English
Pages (from-to)	4789-4793
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	34
DOIs	https://doi.org/10.1002/adma.201302047
Publication status	Published - 2013 Sept 14
Externally published	Yes

Keywords

non-volatile memory
one diode-one resistor
silicon oxides

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201302047

Cite this

@article{1185194232aa468387b7badd755764e9,

title = "High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array",

abstract = "An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx-based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.",

keywords = "non-volatile memory, one diode-one resistor, silicon oxides",

author = "Gunuk Wang and Lauchner, {Adam C.} and Jian Lin and Douglas Natelson and Palem, {Krishna V.} and Tour, {James M.}",

year = "2013",

month = sep,

day = "14",

doi = "10.1002/adma.201302047",

language = "English",

volume = "25",

pages = "4789--4793",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "34",

}

TY - JOUR

T1 - High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array

AU - Wang, Gunuk

AU - Lauchner, Adam C.

AU - Lin, Jian

AU - Natelson, Douglas

AU - Palem, Krishna V.

AU - Tour, James M.

PY - 2013/9/14

Y1 - 2013/9/14

N2 - An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx-based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

AB - An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx-based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

KW - non-volatile memory

KW - one diode-one resistor

KW - silicon oxides

UR - http://www.scopus.com/inward/record.url?scp=84883803801&partnerID=8YFLogxK

U2 - 10.1002/adma.201302047

DO - 10.1002/adma.201302047

M3 - Article

C2 - 23836363

AN - SCOPUS:84883803801

SN - 0935-9648

VL - 25

SP - 4789

EP - 4793

JO - Advanced Materials

JF - Advanced Materials

IS - 34

ER -