High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film

Jun Soo Han; Sang Heon Lee; Cheol Jin Lee

doi:10.1109/JEDS.2022.3178742

High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film

Jun Soo Han, Sang Heon Lee, Cheol Jin Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The carbon nanotube (CNT) field emitter was fabricated using a thin free-standing CNT film, indicating a line-shape CNT field emitter. Field emission properties of the CNT field emitter were investigated in both diode and triode configurations. The CNT field emitter showed a low turn-on electric field of 1.8 V/ μ m and a high emission current of 40.3 mA, corresponding to the emission current density of 96 A/cm2 in the diode configuration. It also exhibited a high anode current of 40 mA, corresponding to the anode current density of 95.2 A/cm2 in the triode configuration. In addition, the CNT field emitter showed a good electron beam transmittance of 86.4% and excellent emission stability without degradation for 15 h. The main reason for the high performance of our CNT field emitter is caused by the high density of emission sites at the edge of the CNT film.

Original language	English
Pages (from-to)	402-407
Number of pages	6
Journal	IEEE Journal of the Electron Devices Society
Volume	10
DOIs	https://doi.org/10.1109/JEDS.2022.3178742
Publication status	Published - 2022

Keywords

Carbon nanotube (CNT)
Carbon nanotube film
Field emission
Field emitter

ASJC Scopus subject areas

Biotechnology
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/JEDS.2022.3178742

Cite this

@article{5db30938f52c4ef680e63519fc836416,

title = "High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film",

abstract = "The carbon nanotube (CNT) field emitter was fabricated using a thin free-standing CNT film, indicating a line-shape CNT field emitter. Field emission properties of the CNT field emitter were investigated in both diode and triode configurations. The CNT field emitter showed a low turn-on electric field of 1.8 V/ μ m and a high emission current of 40.3 mA, corresponding to the emission current density of 96 A/cm2 in the diode configuration. It also exhibited a high anode current of 40 mA, corresponding to the anode current density of 95.2 A/cm2 in the triode configuration. In addition, the CNT field emitter showed a good electron beam transmittance of 86.4% and excellent emission stability without degradation for 15 h. The main reason for the high performance of our CNT field emitter is caused by the high density of emission sites at the edge of the CNT film.",

keywords = "Carbon nanotube (CNT), Carbon nanotube film, Field emission, Field emitter",

author = "Han, {Jun Soo} and Lee, {Sang Heon} and Lee, {Cheol Jin}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2022",

doi = "10.1109/JEDS.2022.3178742",

language = "English",

volume = "10",

pages = "402--407",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film

AU - Han, Jun Soo

AU - Lee, Sang Heon

AU - Lee, Cheol Jin

PY - 2022

Y1 - 2022

N2 - The carbon nanotube (CNT) field emitter was fabricated using a thin free-standing CNT film, indicating a line-shape CNT field emitter. Field emission properties of the CNT field emitter were investigated in both diode and triode configurations. The CNT field emitter showed a low turn-on electric field of 1.8 V/ μ m and a high emission current of 40.3 mA, corresponding to the emission current density of 96 A/cm2 in the diode configuration. It also exhibited a high anode current of 40 mA, corresponding to the anode current density of 95.2 A/cm2 in the triode configuration. In addition, the CNT field emitter showed a good electron beam transmittance of 86.4% and excellent emission stability without degradation for 15 h. The main reason for the high performance of our CNT field emitter is caused by the high density of emission sites at the edge of the CNT film.

AB - The carbon nanotube (CNT) field emitter was fabricated using a thin free-standing CNT film, indicating a line-shape CNT field emitter. Field emission properties of the CNT field emitter were investigated in both diode and triode configurations. The CNT field emitter showed a low turn-on electric field of 1.8 V/ μ m and a high emission current of 40.3 mA, corresponding to the emission current density of 96 A/cm2 in the diode configuration. It also exhibited a high anode current of 40 mA, corresponding to the anode current density of 95.2 A/cm2 in the triode configuration. In addition, the CNT field emitter showed a good electron beam transmittance of 86.4% and excellent emission stability without degradation for 15 h. The main reason for the high performance of our CNT field emitter is caused by the high density of emission sites at the edge of the CNT film.

KW - Carbon nanotube (CNT)

KW - Carbon nanotube film

KW - Field emission

KW - Field emitter

UR - http://www.scopus.com/inward/record.url?scp=85131754812&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2022.3178742

DO - 10.1109/JEDS.2022.3178742

M3 - Article

AN - SCOPUS:85131754812

SN - 2168-6734

VL - 10

SP - 402

EP - 407

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

High-Performance Field Electron Emitters Fabricated Using a Free-Standing Carbon Nanotube Film

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this