High Performance GaAs MESFETs Grown on InP Substrates by MOCVD Using Tertiarybutylarsine

J. Jeong; R. M. Lum; J. K. Klingert; R. Bylsma; G. P. Vella-Coleiro; P. R. Smith

doi:10.1049/el:19900313

High Performance GaAs MESFETs Grown on InP Substrates by MOCVD Using Tertiarybutylarsine

J. Jeong, R. M. Lum, J. K. Klingert, R. Bylsma, G. P. Vella-Coleiro, P. R. Smith

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH₂) is reported. The 1µm gate FETs have a maximum extrinsic transconductance of 135mS/mm and an output transconductance of 5.5mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency of oscillation of 22 GHz are obtained from Sparameter measurements. DC and microwave characteristics of t-BuAsH₂grown GaAs MESFETs are comparable to those of GaAs MESFETs grown using AsH₃.

Original language	English
Pages (from-to)	482-484
Number of pages	3
Journal	Electronics Letters
Volume	26
Issue number	7
DOIs	https://doi.org/10.1049/el:19900313
Publication status	Published - 1990

Keywords

Gallium arsenide
Semiconductor devices and materials
Vapour deposition

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19900313

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title = "High Performance GaAs MESFETs Grown on InP Substrates by MOCVD Using Tertiarybutylarsine",

abstract = "Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH2) is reported. The 1µm gate FETs have a maximum extrinsic transconductance of 135mS/mm and an output transconductance of 5.5mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency of oscillation of 22 GHz are obtained from Sparameter measurements. DC and microwave characteristics of t-BuAsH2grown GaAs MESFETs are comparable to those of GaAs MESFETs grown using AsH3.",

keywords = "Gallium arsenide, Semiconductor devices and materials, Vapour deposition",

author = "J. Jeong and Lum, {R. M.} and Klingert, {J. K.} and R. Bylsma and Vella-Coleiro, {G. P.} and Smith, {P. R.}",

year = "1990",

doi = "10.1049/el:19900313",

language = "English",

volume = "26",

pages = "482--484",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

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TY - JOUR

T1 - High Performance GaAs MESFETs Grown on InP Substrates by MOCVD Using Tertiarybutylarsine

AU - Jeong, J.

AU - Lum, R. M.

AU - Klingert, J. K.

AU - Bylsma, R.

AU - Vella-Coleiro, G. P.

AU - Smith, P. R.

PY - 1990

Y1 - 1990

N2 - Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH2) is reported. The 1µm gate FETs have a maximum extrinsic transconductance of 135mS/mm and an output transconductance of 5.5mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency of oscillation of 22 GHz are obtained from Sparameter measurements. DC and microwave characteristics of t-BuAsH2grown GaAs MESFETs are comparable to those of GaAs MESFETs grown using AsH3.

AB - Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH2) is reported. The 1µm gate FETs have a maximum extrinsic transconductance of 135mS/mm and an output transconductance of 5.5mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency of oscillation of 22 GHz are obtained from Sparameter measurements. DC and microwave characteristics of t-BuAsH2grown GaAs MESFETs are comparable to those of GaAs MESFETs grown using AsH3.

KW - Gallium arsenide

KW - Semiconductor devices and materials

KW - Vapour deposition

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DO - 10.1049/el:19900313

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SP - 482

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JO - Electronics Letters

JF - Electronics Letters

IS - 7

ER -

High Performance GaAs MESFETs Grown on InP Substrates by MOCVD Using Tertiarybutylarsine

Abstract

Keywords

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