High Performance GaAs MESFETs Grown on InP Substrates by MOCVD Using Tertiarybutylarsine

J. Jeong, R. M. Lum, J. K. Klingert, R. Bylsma, G. P. Vella-Coleiro, P. R. Smith

    Research output: Contribution to journal › Article › peer-review

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    Engineering

    Physics