High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer

Jeong Tak Oh, Yong Tae Moon, Jung Hun Jang, Jung Hyun Eum, Youn Joon Sung, Sang Youl Lee, Jun O. Song, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

A combined buffer layer growth process was developed to grow crack-free GaN layers on 8-inch Si(111) wafers and so light-emitting diodes (LEDs). The combined buffer layer consisted of 2 nm-thick low-temperature (LT, 850 °C)-AlN, 8 nm-thick graded-temperature AlN, and 200 nm-thick high-temperature (HT, 1100 °C)-AlN layers. The X-ray diffraction (XRD) results showed that the LT-HT-AlN buffer layer exhibited better crystal quality than the HT-AlN buffer layer. The atomic force microscopy (AFM) images revealed that compared to the LT-HT-AlN buffer layer, the HT-AlN buffer layer had a rough surface with numerous bright spots, which correspond to N-polar AlN hillocks. Scanning electron microscopy (SEM) results showed many pits in the HT-AlN buffer layer. Transmission electron microscopy (TEM) results showed that the HT-AlN buffer layer contained about 1.3 nm-thick amorphous SixNy layer at the interface, while the LT-HT-AlN buffer layer showed a relatively smooth interface. It was further shown that using the LT-HT-AlN buffer layer, high-quality crack-free n-GaN layers (2.5 μm-thick) were grown on the 8-inch Si(111) substrate, which was confirmed by the XRD and cathodoluminescence results. Subsequently, packaged vertical LEDs (chip size: 1400 × 1400 μm2) grown on the LT-HT-AlN buffer layers showed higher light output power and chip yield than LEDs with the HT-AlN buffer layer.

Original languageEnglish
Pages (from-to)630-636
Number of pages7
JournalJournal of Alloys and Compounds
Volume732
DOIs
Publication statusPublished - 2018 Jan 25

Bibliographical note

Funding Information:
This work was supported by LG Innotek Co., Ltd. and the Global Research Laboratory (GRL) program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning ( NRF-2017K1A1A2013160 ).

Publisher Copyright:
© 2017 Elsevier B.V.

Keywords

  • AlN buffer
  • Electron microscopy
  • GaN
  • Light emitting diode
  • Si substrate

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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