High-performance GaN-based light emitting diodes grown on 8-inch Si substrate by using a combined low-temperature and high-temperature-grown AlN buffer layer
Jeong Tak Oh, Yong Tae Moon, Jung Hun Jang, Jung Hyun Eum, Youn Joon Sung, Sang Youl Lee, Jun O. Song, Tae Yeon Seong
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