Abstract
A high-performance 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN)/molybdenum oxide (MoO3) hybrid buffer layer with high hole-injection efficiency and superior plasma resistance under the sputtering process was developed. The HATCN enhances the hole-injection efficiency, and the MoO3 effectively protects the underlying organic layers from plasma damage during deposition by sputtering. This improves the characteristics of inverted top-emitting organic light-emitting diodes using a top transparent conductive oxide electrode. The device using the hybrid buffer layer showed the highest electroluminescence characteristics among devices with other buffer layers. The high hole-injection efficiency of HATCN was shown by the J-F curve of hole-only devices, and the plasma protection performance of MoO3 was shown by atomic force microscope surface morphology images of the buffer layer film after O2 plasma treatment.
Original language | English |
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Pages (from-to) | 6047-6053 |
Number of pages | 7 |
Journal | ACS Applied Materials and Interfaces |
Volume | 7 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2015 Mar 25 |
Keywords
- 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HATCN)
- buffer Layer
- inverted top-emitting organic light-emitting diodes (ITEOLEDs)
- molybdenum oxide (MoO)
ASJC Scopus subject areas
- Materials Science(all)