High Performance Hybrid-Phototransistor Based on ZnON/perovskite Heterostructure Through Multi-Functional Passivation

Kwang Ro Yun, Min Gyu Jeon, Tae Ju Lee, Jong Ho Kim, Su Kyung Kim, Se Jin Kim, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review


Organic–inorganic halide perovskites are widely investigated for various optoelectronics devices such as photodetectors and solar cells. However, Pb-based perovskite photodetectors perform poorly because of insufficient mobility and absence of an effective photoconductive gain mechanism. Herein, ZnON/perovskite heterostructures are demonstrated to realize the fabrication of high-performance hybrid phototransistors. Additionally, a guanidinium iodide (GuI), alternating-cation-interlayer (ACI)-type organic spacers, are utilized as an interface passivation layer. It is shown that the GuI interface layer reduces the defect density of the ZnON surface as well as the bulk perovskite film and promotes the separation and transport of photo-generated charge carriers. Devices fabricated with the GuI interface passivation layer have a response speed of 0.1 s, excellent responsivity of 5.97 × 106 A W−1, and ultra-high specific detectivity of 1.28 × 1018 Jones, the highest value among previously reported perovskite-based hybrid phototransistors. This work provides valuable insights into the design and fabrication of high-performance metal oxide/perovskite heterostructures with promising applications in future optoelectronic devices.

Original languageEnglish
Article number2312240
JournalAdvanced Functional Materials
Issue number13
Publication statusPublished - 2024 Mar 25

Bibliographical note

Publisher Copyright:
© 2023 Wiley-VCH GmbH.


  • heterostructure
  • hybrid
  • interface
  • metal oxide
  • passivation
  • perovskite
  • phototransistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Biomaterials
  • General Materials Science
  • Condensed Matter Physics
  • Electrochemistry


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