High-performance metal-insulator-metal capacitors using amorphous BASm2Ti4O12 thin film

Young Hun Jeong; Jong Bong Lim; Sahn Nahm; Ho Jung Sun; Hwack Joo Lee

doi:10.1109/LED.2006.887634

High-performance metal-insulator-metal capacitors using amorphous BASm₂Ti₄O₁₂ thin film

Young Hun Jeong, Jong Bong Lim, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The dielectric properties of the amorphous BaSm₂Ti₄ O₁₂ film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300°C exhibited a high capacitance density of 9.9 fF/μm² at 100 kHz and a low leakage current density of 1.790 at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V² and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/°C at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor.

Original language	English
Pages (from-to)	17-20
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	28
Issue number	1
DOIs	https://doi.org/10.1109/LED.2006.887634
Publication status	Published - 2007 Jan

Keywords

High-κ
Metal-insulator-metal (MIM) capacitor
Temperature coefficient of capacitance (TCC)
Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2006.887634

Cite this

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title = "High-performance metal-insulator-metal capacitors using amorphous BASm2Ti4O12 thin film",

abstract = "The dielectric properties of the amorphous BaSm2Ti4 O12 film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300°C exhibited a high capacitance density of 9.9 fF/μm2 at 100 kHz and a low leakage current density of 1.790 at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V2 and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/°C at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor.",

keywords = "High-κ, Metal-insulator-metal (MIM) capacitor, Temperature coefficient of capacitance (TCC), Voltage coefficient of capacitance (VCC)",

author = "Jeong, {Young Hun} and Lim, {Jong Bong} and Sahn Nahm and Sun, {Ho Jung} and Lee, {Hwack Joo}",

note = "Funding Information: Manuscript received June 26, 2006; revised October 18, 2006. This work was supported by the Ministry of Commerce, Industry and Energy through the Standardization project and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project. The review of this letter was arranged by Editor A. Wang.",

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AU - Jeong, Young Hun

AU - Lim, Jong Bong

AU - Nahm, Sahn

AU - Sun, Ho Jung

AU - Lee, Hwack Joo

N1 - Funding Information: Manuscript received June 26, 2006; revised October 18, 2006. This work was supported by the Ministry of Commerce, Industry and Energy through the Standardization project and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project. The review of this letter was arranged by Editor A. Wang.

PY - 2007/1

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N2 - The dielectric properties of the amorphous BaSm2Ti4 O12 film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300°C exhibited a high capacitance density of 9.9 fF/μm2 at 100 kHz and a low leakage current density of 1.790 at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V2 and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/°C at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor.

AB - The dielectric properties of the amorphous BaSm2Ti4 O12 film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300°C exhibited a high capacitance density of 9.9 fF/μm2 at 100 kHz and a low leakage current density of 1.790 at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V2 and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/°C at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor.

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KW - Metal-insulator-metal (MIM) capacitor

KW - Temperature coefficient of capacitance (TCC)

KW - Voltage coefficient of capacitance (VCC)

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