High-performance metal-insulator-metal capacitors using amorphous BASm2Ti4O12 thin film

Young Hun Jeong, Jong Bong Lim, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The dielectric properties of the amorphous BaSm2Ti4 O12 film with various thicknesses were investigated to evaluate its potential use as a metal-insulator-metal (MIM) capacitor. An amorphous 35-nm-thick BSmT film grown at 300°C exhibited a high capacitance density of 9.9 fF/μm2 at 100 kHz and a low leakage current density of 1.790 at 1 V. The quadratic and linear voltage coefficients of capacitance of the film were 599 ppm/V2 and -81 ppm/V at 100 kHz, respectively. The temperature coefficient of capacitance of the film was also low about 236 ppm/°C at 100 kHz. These results confirmed the suitability of the amorphous BSmT film as a high-performance MIM capacitor.

Original languageEnglish
Pages (from-to)17-20
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number1
DOIs
Publication statusPublished - 2007 Jan

Bibliographical note

Funding Information:
Manuscript received June 26, 2006; revised October 18, 2006. This work was supported by the Ministry of Commerce, Industry and Energy through the Standardization project and one of the authors also acknowledges that this work was financially supported by the Ministry of Science and Technology through the NRL project. The review of this letter was arranged by Editor A. Wang.

Keywords

  • High-κ
  • Metal-insulator-metal (MIM) capacitor
  • Temperature coefficient of capacitance (TCC)
  • Voltage coefficient of capacitance (VCC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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