High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

Hyun Yong Yu; Masaharu Kobayashi; Woo Shik Jung; Ali K. Okyay; Yoshio Nishi; Krishna C. Saraswat

doi:10.1109/IEDM.2009.5424245

High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

Hyun Yong Yu, Masaharu Kobayashi, Woo Shik Jung, Ali K. Okyay, Yoshio Nishi, Krishna C. Saraswat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n⁺/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent I_on/I_off ratio(4× 10₃) with very high I_on of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	29.4.1-29.4.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424245
Publication status	Published - 2009
Externally published	Yes
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 2009 Dec 7 → 2009 Dec 9

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	09/12/7 → 09/12/9

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2009.5424245

Cite this

Yu, H. Y., Kobayashi, M., Jung, W. S., Okyay, A. K., Nishi, Y., & Saraswat, K. C. (2009). High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 29.4.1-29.4.4). Article 5424245 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424245

High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration. / Yu, Hyun Yong; Kobayashi, Masaharu; Jung, Woo Shik et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 29.4.1-29.4.4 5424245 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yu, HY, Kobayashi, M, Jung, WS, Okyay, AK, Nishi, Y & Saraswat, KC 2009, High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424245, Technical Digest - International Electron Devices Meeting, IEDM, pp. 29.4.1-29.4.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 09/12/7. https://doi.org/10.1109/IEDM.2009.5424245

Yu HY, Kobayashi M, Jung WS, Okyay AK, Nishi Y, Saraswat KC. High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 29.4.1-29.4.4. 5424245. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424245

@inproceedings{e88616e34d734789a6d1a203db03496e,

title = "High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration",

abstract = "We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.",

author = "Yu, {Hyun Yong} and Masaharu Kobayashi and Jung, {Woo Shik} and Okyay, {Ali K.} and Yoshio Nishi and Saraswat, {Krishna C.}",

year = "2009",

doi = "10.1109/IEDM.2009.5424245",

language = "English",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "29.4.1--29.4.4",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

}

TY - GEN

T1 - High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

AU - Yu, Hyun Yong

AU - Kobayashi, Masaharu

AU - Jung, Woo Shik

AU - Okyay, Ali K.

AU - Nishi, Yoshio

AU - Saraswat, Krishna C.

PY - 2009

Y1 - 2009

N2 - We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.

AB - We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n+/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff ratio(4× 103) with very high Ion of 3.23μA/μm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.

UR - http://www.scopus.com/inward/record.url?scp=77952366681&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2009.5424245

DO - 10.1109/IEDM.2009.5424245

M3 - Conference contribution

AN - SCOPUS:77952366681

SN - 9781424456406

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 29.4.1-29.4.4

BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest

T2 - 2009 International Electron Devices Meeting, IEDM 2009

Y2 - 7 December 2009 through 9 December 2009

ER -

High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this