High performance stretchable UV sensor arrays of SnO₂ nanowires

A high performance, stretchable UV sensor array was fabricated based on an active matrix (AM) device that combined field effect transistors of SWCNTs and SnO₂ nanowires. The AM devices provided spatial UV sensing via the individual sensors in the array. SnO₂ NW UV sensors showed an average photosensitivity of ∼10⁵ and a photoconductive gain of ∼10⁶ under very low UV (λ = 254 nm) power intensities of 0.02-0.04 mW cm^-2. The UV sensing performance was not deteriorated by a prestrain of up to 23% induced by radial deformation, consistent with the mechanical analysis.