TY - GEN
T1 - High performance X-ray source using point-typed CNT field emitter
AU - Lee, Sang Heon
AU - Han, Jun Soo
AU - Go, Han Bin
AU - Jeon, Joohyun
AU - Yang, Jun Hyeok
AU - Kim, Paul
AU - Lee, Cheol Jin
N1 - Funding Information:
ACKNOWLEDGMENT This work was supported by the Brain Korea Project through the Ministry of Education in Korea.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/1
Y1 - 2018/11/1
N2 - The high performance cold cathode X-ray source was fabricated by using the point-typed CNT field emitter. The cold cathode X-ray source consists of the CNT point emitter, the metal mesh gate electrode, the metal hole focusing lens and the tungsten target anode electrode. To fabricate X-ray source, such components were mounted in a SUS vacuum chamber. The fabricated CNT X-ray source showed a good resolution of X-ray images at a low anode current and at a low anode voltage, and also indicated stable operation. We evaluated X-ray images according to the tube voltage and the tube current, respectively.
AB - The high performance cold cathode X-ray source was fabricated by using the point-typed CNT field emitter. The cold cathode X-ray source consists of the CNT point emitter, the metal mesh gate electrode, the metal hole focusing lens and the tungsten target anode electrode. To fabricate X-ray source, such components were mounted in a SUS vacuum chamber. The fabricated CNT X-ray source showed a good resolution of X-ray images at a low anode current and at a low anode voltage, and also indicated stable operation. We evaluated X-ray images according to the tube voltage and the tube current, respectively.
KW - X-ray image
KW - carbon nanotube field emitter
KW - cold cathode X-ray source
KW - metal mesh gate electrode
KW - point-typed field emitter
KW - tungsten anode electrode
UR - http://www.scopus.com/inward/record.url?scp=85057452124&partnerID=8YFLogxK
U2 - 10.1109/IVNC.2018.8520211
DO - 10.1109/IVNC.2018.8520211
M3 - Conference contribution
AN - SCOPUS:85057452124
T3 - 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018
BT - 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 31st International Vacuum Nanoelectronics Conference, IVNC 2018
Y2 - 9 July 2018 through 13 July 2018
ER -