High-power external cavity CW red laser diode

Hong Joo Song; Jun Ho Lee; Jiyeon Park; Jong Hwan Park; Hong Man Na; Jung ho Park

doi:10.1117/12.2079456

High-power external cavity CW red laser diode

Hong Joo Song, Jun Ho Lee, Jiyeon Park, Jong Hwan Park, Hong Man Na, Jung ho Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

An front facet-low reflection coated broad-area laser(BAL) diode with an emitter size of 50 μm x 1 μm and a chip length of 2000 μm is operated in the external cavity diode laser(ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 1.5 A, a output power of 0.65 W with a slop efficiency of 0.85 A/W, which is comparable to those of a solitary BAL diode, could be achieved with a spectral width of 120pm which is about 77 % narrower as compared to a solitary BAL diode. The peak wavelength stability below 10 pm was obtained in the wide range of output power up to 0.65 W.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	9348
ISBN (Print)	9781628414387
DOIs	https://doi.org/10.1117/12.2079456
Publication status	Published - 2015
Event	High-Power Diode Laser Technology and Applications XIII - San Francisco, United States Duration: 2015 Feb 8 → 2015 Feb 10

Other

Other	High-Power Diode Laser Technology and Applications XIII
Country/Territory	United States
City	San Francisco
Period	15/2/8 → 15/2/10

Keywords

broad area laser(BAL) diode
diffraction grating
external cavity diode laser
high output power
Red emitting lasers
spectral width
wavelength locking
wavelength stabilization

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.2079456

Cite this

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title = "High-power external cavity CW red laser diode",

abstract = "An front facet-low reflection coated broad-area laser(BAL) diode with an emitter size of 50 μm x 1 μm and a chip length of 2000 μm is operated in the external cavity diode laser(ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 1.5 A, a output power of 0.65 W with a slop efficiency of 0.85 A/W, which is comparable to those of a solitary BAL diode, could be achieved with a spectral width of 120pm which is about 77 % narrower as compared to a solitary BAL diode. The peak wavelength stability below 10 pm was obtained in the wide range of output power up to 0.65 W.",

keywords = "broad area laser(BAL) diode, diffraction grating, external cavity diode laser, high output power, Red emitting lasers, spectral width, wavelength locking, wavelength stabilization",

author = "Song, {Hong Joo} and Lee, {Jun Ho} and Jiyeon Park and Park, {Jong Hwan} and Na, {Hong Man} and Park, {Jung ho}",

year = "2015",

doi = "10.1117/12.2079456",

language = "English",

isbn = "9781628414387",

volume = "9348",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

note = "High-Power Diode Laser Technology and Applications XIII ; Conference date: 08-02-2015 Through 10-02-2015",

}

TY - GEN

T1 - High-power external cavity CW red laser diode

AU - Song, Hong Joo

AU - Lee, Jun Ho

AU - Park, Jiyeon

AU - Park, Jong Hwan

AU - Na, Hong Man

AU - Park, Jung ho

PY - 2015

Y1 - 2015

N2 - An front facet-low reflection coated broad-area laser(BAL) diode with an emitter size of 50 μm x 1 μm and a chip length of 2000 μm is operated in the external cavity diode laser(ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 1.5 A, a output power of 0.65 W with a slop efficiency of 0.85 A/W, which is comparable to those of a solitary BAL diode, could be achieved with a spectral width of 120pm which is about 77 % narrower as compared to a solitary BAL diode. The peak wavelength stability below 10 pm was obtained in the wide range of output power up to 0.65 W.

AB - An front facet-low reflection coated broad-area laser(BAL) diode with an emitter size of 50 μm x 1 μm and a chip length of 2000 μm is operated in the external cavity diode laser(ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 1.5 A, a output power of 0.65 W with a slop efficiency of 0.85 A/W, which is comparable to those of a solitary BAL diode, could be achieved with a spectral width of 120pm which is about 77 % narrower as compared to a solitary BAL diode. The peak wavelength stability below 10 pm was obtained in the wide range of output power up to 0.65 W.

KW - broad area laser(BAL) diode

KW - diffraction grating

KW - external cavity diode laser

KW - high output power

KW - Red emitting lasers

KW - spectral width

KW - wavelength locking

KW - wavelength stabilization

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U2 - 10.1117/12.2079456

DO - 10.1117/12.2079456

M3 - Conference contribution

AN - SCOPUS:84931477884

SN - 9781628414387

VL - 9348

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

T2 - High-Power Diode Laser Technology and Applications XIII

Y2 - 8 February 2015 through 10 February 2015

ER -

High-power external cavity CW red laser diode

Abstract

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Keywords

ASJC Scopus subject areas

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