@article{3d035d82799b4029884e26a7f2a04642,
title = "High power single-lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure",
abstract = "We report on the high-power, single-lateral-mode operation of InAs quantum dot (QD) based ridge type laser diodes (LDs) by utilizing a double bend (DB) waveguide structure. The LDs were designed so that only fundamental modes propagate and higher optical modes are suppressed through the bent regions. DB waveguide LDs allow the use of wide ridge widths for fundamental mode operations, which helps to increase their output power via the increase in their net gain. We measured continuous wave single-lateral-mode output power of up to 310 mW from InAs QD DB waveguide LDs manufactured with 10-μm -wide stripes without facet coating.",
author = "Kim, {Kyoung Chan} and Han, {Il Ki} and Lee, {Jung Il} and Kim, {Tae Geun}",
note = "Funding Information: This work was supported by the Ministry of Knowledge Economy through the IT Industry Foundation program (2M23780) and in part by KICOS through a grant provided by the Ministry of Education, Science and Technology, Project No. M60605000007-06A0500-00710, and KIST R&D program (Grant No. 2E21671). This work was also supported by a National Research Foundation (NRF) grant funded by the Korean government (Grant No. K20901000002-09E0100-00210) and the Basic Science Research Program funded by the Ministry of Education, Science and Technology (Quantum Photonic Science Research Center), and Seoul R&BD Program (Grant No. WR080951).",
year = "2010",
month = jun,
day = "28",
doi = "10.1063/1.3459150",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",
}