High-power single-mode 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes with wide apertures

Kyoung Chan Kim, Dong Kie Jang, Jung Il Lee, Tae Geun Kim, Woo Won Lee, Jeong Ho Kim, Eun Jeong Yang, Bon Jo Koo, Il Ki Han

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A wide-aperture ridge waveguide structure was applied to 1.3-μm InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-μm-wide ridge top and a 1.5-mm-long uncoated cavity.

Original languageEnglish
Pages (from-to)1438-1440
Number of pages3
JournalIEEE Photonics Technology Letters
Volume21
Issue number19
DOIs
Publication statusPublished - 2009

Bibliographical note

Funding Information:
Manuscript received June 05, 2009; revised July 08, 2009. First published July 28, 2009; current version published September 18, 2009. This work was supported in part by the Ministry of Knowledge Economy under the IT Industry Foundation Program, in part by the Korea Foundation for International Cooperation of Science and Technology through a Grant provided by the Ministry of Education, Science and Technology under Project M60605000007-06A0500-00710, and in part by the Basic Science Research Program under the National Research Foundation of Korea Grant funded by the Ministry of Education, Science and Technology (Quntum Photonic Science Research Center).

Keywords

  • High-power
  • Multiple quantum well (MQW)
  • Single-mode laser diodes (LDs)
  • Wide aperture

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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