High-quality Cu-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

Dong Seok Leem; June O. Song; J. S. Kwak; Y. Park; Tae Yeon Seong

doi:10.1149/1.1788611

High-quality Cu-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

Dong Seok Leem, June O. Song, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Very low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light-emitting diodes (LEDs) were investigated. The Cu-Ni solid solution/Ag contacts produce specific contact resistance of 10 ^-5 to 10^-6 Ω cm² when annealed at 450 and 550°C for 1 min in air. LEDs fabricated with the annealed Cu-Ni solid solution/Ag contact layers give lower forward-bias voltages of 3.18-3.20 V at 20 mA. The light output power of LEDs with the Cu-Ni solid solution/Ag contact layer is higher than that of the Cu/Ag contact LEDs.

Original language	English
Pages (from-to)	G210-G212
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	10
DOIs	https://doi.org/10.1149/1.1788611
Publication status	Published - 2004
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "High-quality Cu-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes",

abstract = "Very low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light-emitting diodes (LEDs) were investigated. The Cu-Ni solid solution/Ag contacts produce specific contact resistance of 10 -5 to 10-6 Ω cm2 when annealed at 450 and 550°C for 1 min in air. LEDs fabricated with the annealed Cu-Ni solid solution/Ag contact layers give lower forward-bias voltages of 3.18-3.20 V at 20 mA. The light output power of LEDs with the Cu-Ni solid solution/Ag contact layer is higher than that of the Cu/Ag contact LEDs.",

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T1 - High-quality Cu-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

AU - Leem, Dong Seok

AU - Song, June O.

AU - Kwak, J. S.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2004

Y1 - 2004

N2 - Very low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light-emitting diodes (LEDs) were investigated. The Cu-Ni solid solution/Ag contacts produce specific contact resistance of 10 -5 to 10-6 Ω cm2 when annealed at 450 and 550°C for 1 min in air. LEDs fabricated with the annealed Cu-Ni solid solution/Ag contact layers give lower forward-bias voltages of 3.18-3.20 V at 20 mA. The light output power of LEDs with the Cu-Ni solid solution/Ag contact layer is higher than that of the Cu/Ag contact LEDs.

AB - Very low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light-emitting diodes (LEDs) were investigated. The Cu-Ni solid solution/Ag contacts produce specific contact resistance of 10 -5 to 10-6 Ω cm2 when annealed at 450 and 550°C for 1 min in air. LEDs fabricated with the annealed Cu-Ni solid solution/Ag contact layers give lower forward-bias voltages of 3.18-3.20 V at 20 mA. The light output power of LEDs with the Cu-Ni solid solution/Ag contact layer is higher than that of the Cu/Ag contact LEDs.

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High-quality Cu-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

Abstract

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