High-quality Cu-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

Dong Seok Leem, June O. Song, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Very low resistance and reflective Cu-Ni solid solution/Ag ohmic contacts to p-GaN for flip-chip light-emitting diodes (LEDs) were investigated. The Cu-Ni solid solution/Ag contacts produce specific contact resistance of 10 -5 to 10-6 Ω cm2 when annealed at 450 and 550°C for 1 min in air. LEDs fabricated with the annealed Cu-Ni solid solution/Ag contact layers give lower forward-bias voltages of 3.18-3.20 V at 20 mA. The light output power of LEDs with the Cu-Ni solid solution/Ag contact layer is higher than that of the Cu/Ag contact LEDs.

Original languageEnglish
Pages (from-to)G210-G212
JournalElectrochemical and Solid-State Letters
Issue number10
Publication statusPublished - 2004
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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