High quality non-alloyed Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja Soon Jang, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journalConference articlepeer-review


Two-step surface-treatment is introduced to obtain low resistance Pt contacts to p-type GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 3.0 (±3.8)×10-5 Ωcm2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10-2 Ωcm2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.

Original languageEnglish
Pages (from-to)W10.4.1 - W10.4.6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2000
Externally publishedYes
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: 1999 Nov 281999 Dec 3

Bibliographical note

Funding Information:
This work was supported by Korea Ministry of Information and Communications (C1-98-0929) and Critical Technology 21 (Development of Power Semiconductors) (98-N5-01-01-A-08).

Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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