High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

June O. Song; Dong Seok Leem; Joon Seop Kwak; O. H. Nam; Y. Park; Tae Yeon Seong

doi:10.1063/1.1613991

High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

June O. Song^*
, Dong Seok Leem
, Joon Seop Kwak
, O. H. Nam
, Y. Park
, Tae Yeon Seong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

High-quality nonalloyed rhodium (Rh)-based ohmic contacts to p-type GaN were studied. The mechanisms for the ohmic contact formation without a post-annealing process were investigated using x-ray photoelectron microscopy (XPS). The results implied that Rh interacted with gallium and formed interfacial product such as gallides.

Original language	English
Pages (from-to)	2372-2374
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	12
DOIs	https://doi.org/10.1063/1.1613991
Publication status	Published - 2003 Sept 22
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1613991

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title = "High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN",

abstract = "High-quality nonalloyed rhodium (Rh)-based ohmic contacts to p-type GaN were studied. The mechanisms for the ohmic contact formation without a post-annealing process were investigated using x-ray photoelectron microscopy (XPS). The results implied that Rh interacted with gallium and formed interfacial product such as gallides.",

author = "Song, \{June O.\} and Leem, \{Dong Seok\} and Kwak, \{Joon Seop\} and Nam, \{O. H.\} and Y. Park and Seong, \{Tae Yeon\}",

year = "2003",

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doi = "10.1063/1.1613991",

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journal = "Applied Physics Letters",

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T1 - High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

AU - Song, June O.

AU - Leem, Dong Seok

AU - Kwak, Joon Seop

AU - Nam, O. H.

AU - Park, Y.

AU - Seong, Tae Yeon

PY - 2003/9/22

Y1 - 2003/9/22

N2 - High-quality nonalloyed rhodium (Rh)-based ohmic contacts to p-type GaN were studied. The mechanisms for the ohmic contact formation without a post-annealing process were investigated using x-ray photoelectron microscopy (XPS). The results implied that Rh interacted with gallium and formed interfacial product such as gallides.

AB - High-quality nonalloyed rhodium (Rh)-based ohmic contacts to p-type GaN were studied. The mechanisms for the ohmic contact formation without a post-annealing process were investigated using x-ray photoelectron microscopy (XPS). The results implied that Rh interacted with gallium and formed interfacial product such as gallides.

UR - https://www.scopus.com/pages/publications/0142058440

U2 - 10.1063/1.1613991

DO - 10.1063/1.1613991

M3 - Article

AN - SCOPUS:0142058440

SN - 0003-6951

VL - 83

SP - 2372

EP - 2374

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN

Abstract

ASJC Scopus subject areas

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