High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Hyun Yong Yu; Szu Lin Cheng; Jin Hong Park; Ali K. Okyay; M. Cengiz Onbal; Burcu Ercan; Yoshio Nishi; Krishna C. Saraswat

doi:10.1063/1.3478242

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Hyun Yong Yu, Szu Lin Cheng, Jin Hong Park, Ali K. Okyay, M. Cengiz Onbal, Burcu Ercan, Yoshio Nishi, Krishna C. Saraswat

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO₂ window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO₂ trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 10⁶ cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platform.

Original language	English
Article number	063503
Journal	Applied Physics Letters
Volume	97
Issue number	6
DOIs	https://doi.org/10.1063/1.3478242
Publication status	Published - 2010 Aug 9
Externally published	Yes

Bibliographical note

Funding Information:
This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by MARCO Interconnect Focus Centers and the Stanford University INMP. The authors are grateful to Ted Kamins for helpful discussion.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3478242

Cite this

@article{ff7fa3be870d4cd58d0b60c9d363026c,

title = "High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing",

abstract = "Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 106 cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platform.",

author = "Yu, {Hyun Yong} and Cheng, {Szu Lin} and Park, {Jin Hong} and Okyay, {Ali K.} and Onbal, {M. Cengiz} and Burcu Ercan and Yoshio Nishi and Saraswat, {Krishna C.}",

note = "Funding Information: This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by MARCO Interconnect Focus Centers and the Stanford University INMP. The authors are grateful to Ted Kamins for helpful discussion.",

year = "2010",

month = aug,

day = "9",

doi = "10.1063/1.3478242",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

AU - Yu, Hyun Yong

AU - Cheng, Szu Lin

AU - Park, Jin Hong

AU - Okyay, Ali K.

AU - Onbal, M. Cengiz

AU - Ercan, Burcu

AU - Nishi, Yoshio

AU - Saraswat, Krishna C.

N1 - Funding Information: This work was performed at the Stanford Nanofabrication Facility (SNF) and was supported by MARCO Interconnect Focus Centers and the Stanford University INMP. The authors are grateful to Ted Kamins for helpful discussion.

PY - 2010/8/9

Y1 - 2010/8/9

N2 - Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 106 cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platform.

AB - Germanium-on-insulator (GOI) is desired for high performance metal-oxide-semiconductor transistors and monolithically integrated optoelectronics. We demonstrate a promising approach to achieve single-crystal defect-free GOI by using lateral over-growth through SiO2 window. The dislocations due to the lattice mismatch are effectively terminated and reduced in SiO2 trench by selective area heteroepitaxy combined with hydrogen annealing. Low defect density of 4× 106 cm-2 and low surface roughness of 0.7 nm (root-mean-square) on GOI are confirmed by plan-view transmission electron microscopy and atomic force microscopy analysis. In addition, the excellent metal-semiconductor-metal diode electrical characteristics fabricated on this GOI confirm Ge crystal quality. The selectively grown GOI structure can provide the monolithic integration of SiGe based devices on a Si very large scale integration (VLSI) platform.

UR - http://www.scopus.com/inward/record.url?scp=77955754585&partnerID=8YFLogxK

U2 - 10.1063/1.3478242

DO - 10.1063/1.3478242

M3 - Article

AN - SCOPUS:77955754585

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063503

ER -

High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this