High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes

Hyun Gi Hong; K. Y. Ban; June O. Song; J. Cho; Y. Park; J. S. Kwak; Ian T. Ferguson; Tae Yeon Seong

doi:10.1002/pssc.200565175

High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes

Hyun Gi Hong, K. Y. Ban, June O. Song, J. Cho, Y. Park, J. S. Kwak, Ian T. Ferguson, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

High quality SnZnO (TZO)/Ag ohmic contacts to p-GaN (N_a = 4×10¹⁷/cm³) for UV flip-chip light-emitting diodes (LEDs) were investigated. The TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10^-4 Ωcm² and reflectance of 76% at 405 nm when annealed at a temperature of 530 °C for Imin in air. Near-UV LEDs made with the annealed TZO (2.5 nm)/Ag (250 nm) contacts give reverse leakage current of ∼10^-8 A at reverse voltage of -10 V. Based on X-ray photoelectron spectroscopy, possible ohmic formation mechanisms are discussed.

Original language	English
Pages (from-to)	2133-2136
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	3
DOIs	https://doi.org/10.1002/pssc.200565175
Publication status	Published - 2006
Event	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: 2005 Aug 28 → 2005 Sept 2

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200565175

Cite this

@article{57e2b54c11b446bd840fe3b0ae9ce39d,

title = "High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes",

abstract = "High quality SnZnO (TZO)/Ag ohmic contacts to p-GaN (Na = 4×1017/cm3) for UV flip-chip light-emitting diodes (LEDs) were investigated. The TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ωcm2 and reflectance of 76% at 405 nm when annealed at a temperature of 530 °C for Imin in air. Near-UV LEDs made with the annealed TZO (2.5 nm)/Ag (250 nm) contacts give reverse leakage current of ∼10-8 A at reverse voltage of -10 V. Based on X-ray photoelectron spectroscopy, possible ohmic formation mechanisms are discussed.",

author = "Hong, {Hyun Gi} and Ban, {K. Y.} and Song, {June O.} and J. Cho and Y. Park and Kwak, {J. S.} and Ferguson, {Ian T.} and Seong, {Tae Yeon}",

year = "2006",

doi = "10.1002/pssc.200565175",

language = "English",

volume = "3",

pages = "2133--2136",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes

AU - Hong, Hyun Gi

AU - Ban, K. Y.

AU - Song, June O.

AU - Cho, J.

AU - Park, Y.

AU - Kwak, J. S.

AU - Ferguson, Ian T.

AU - Seong, Tae Yeon

PY - 2006

Y1 - 2006

N2 - High quality SnZnO (TZO)/Ag ohmic contacts to p-GaN (Na = 4×1017/cm3) for UV flip-chip light-emitting diodes (LEDs) were investigated. The TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ωcm2 and reflectance of 76% at 405 nm when annealed at a temperature of 530 °C for Imin in air. Near-UV LEDs made with the annealed TZO (2.5 nm)/Ag (250 nm) contacts give reverse leakage current of ∼10-8 A at reverse voltage of -10 V. Based on X-ray photoelectron spectroscopy, possible ohmic formation mechanisms are discussed.

AB - High quality SnZnO (TZO)/Ag ohmic contacts to p-GaN (Na = 4×1017/cm3) for UV flip-chip light-emitting diodes (LEDs) were investigated. The TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ωcm2 and reflectance of 76% at 405 nm when annealed at a temperature of 530 °C for Imin in air. Near-UV LEDs made with the annealed TZO (2.5 nm)/Ag (250 nm) contacts give reverse leakage current of ∼10-8 A at reverse voltage of -10 V. Based on X-ray photoelectron spectroscopy, possible ohmic formation mechanisms are discussed.

UR - http://www.scopus.com/inward/record.url?scp=33746356523&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746356523&partnerID=8YFLogxK

U2 - 10.1002/pssc.200565175

DO - 10.1002/pssc.200565175

M3 - Conference article

AN - SCOPUS:33746356523

SN - 1862-6351

VL - 3

SP - 2133

EP - 2136

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes

Abstract

ASJC Scopus subject areas

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