High quality SnZnO (TZO)/Ag ohmic contacts to p-GaN (Na = 4×1017/cm3) for UV flip-chip light-emitting diodes (LEDs) were investigated. The TZO (2.5 nm)/Ag (250 nm) contacts produce contact resistivity of 1.58 × 10-4 Ωcm2 and reflectance of 76% at 405 nm when annealed at a temperature of 530 °C for Imin in air. Near-UV LEDs made with the annealed TZO (2.5 nm)/Ag (250 nm) contacts give reverse leakage current of ∼10-8 A at reverse voltage of -10 V. Based on X-ray photoelectron spectroscopy, possible ohmic formation mechanisms are discussed.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2006|
|Event||6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany|
Duration: 2005 Aug 28 → 2005 Sept 2
ASJC Scopus subject areas
- Condensed Matter Physics