Abstract
High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4H2 mixture and de-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl3 and at de-bias voltage of -350 V.
Original language | English |
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Pages (from-to) | L535-L537 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 42 |
Issue number | 5 B |
DOIs | |
Publication status | Published - 2003 May 15 |
Externally published | Yes |
Keywords
- AZO
- BCl
- Bias voltage
- Etch profile
- Inductively coupled plasma
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy