High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas

Jeong Woon Bae, Chang Hyun Jeong, Han Ki Kim, Kyoung Kook Kim, Nam Gil Cho, Tae Yeon Seong, Seong Ju Park, Ilesanmi Adesida, Geun Young Yeom

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using BCl3/CH4/H2 plasma chemistry. Etch rates were measured as a function of BCl3 flow rate in BCl3/CH4H2 mixture and de-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% BCl3 and at de-bias voltage of -350 V.

Original languageEnglish
Pages (from-to)L535-L537
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number5 B
DOIs
Publication statusPublished - 2003 May 15
Externally publishedYes

Keywords

  • AZO
  • BCl
  • Bias voltage
  • Etch profile
  • Inductively coupled plasma

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'High-rate dry etching of ZnO in BCl3/CH4/H2 plasmas'. Together they form a unique fingerprint.

Cite this