High responsivity solar-blind metal-semiconductor-metal photodetector based on α-Ga2O3

Jinho Bae, Dae Woo Jeon, Ji Hyeon Park, Jihyun Kim

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


α-Ga2O3, with an ultra-high energy bandgap of 5.1 eV, is an attractive material for applications in solar-blind photodetectors and high-power electronics. We fabricated an α-Ga2O3 metal-semiconductor-metal (MSM) interdigitated solar-blind photodetector, where an epitaxial α-Ga2O3 thin film was grown on a sapphire substrate using a hydride vapor-phase epitaxy technique. Excellent optoelectronic device properties including high responsivity (4.24 × 104 A/W), detectivity (1.77 × 1011 Jones), and external quantum efficiency (2.07 × 105) were demonstrated in response to ultraviolet (UV) C wavelength. Under sunlight, the α-Ga2O3 MSM photodetector exhibited stable solar-blind sensitivity to UVC wavelength without interference from the incoming solar spectrum. Our work proposes that α-Ga2O3 has great potential as a next-generation high-performance solar-blind photodetector.

Original languageEnglish
Article number033410
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
Publication statusPublished - 2021 May 1

Bibliographical note

Publisher Copyright:
© 2021 Author(s).

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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